SI7820DN Search Results

S12-1319

Contextual Info: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

TSOP8

Abstract: si7401
Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Contextual Info: REFERENCES FIXED Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Si7820DN

Abstract: Si7820DN-T1
Contextual Info: Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies

Contextual Info: Si7820DN Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200

Si7820DN

Abstract: Si7820DN-T1
Contextual Info: Si7820DN Vishay Siliconix New Product N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 D PWM-Optimized TrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested 0.250 @ VGS = 6 V 2.5 APPLICATIONS VDS (V) 200

SI7820

Abstract: AN609 Si7820DN 73841
Contextual Info: Si7820DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Si7820DN

Abstract: Si7820DN-T1-E3 Si7820DN-T1-GE3
Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Si7820DN

Abstract: Si7820DN SPICE Device Model
Contextual Info: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7820DN

Contextual Info: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.240 @ VGS = 10 V 2.6 0.250 @ VGS = 6 V 2.5 Qg(Typ) 12 1 12.1 S 1 2 RoHS COMPLIANT APPLICATIONS D Primary Side Switch − Telecom Power Supplies

Si7820DN

Contextual Info: SPICE Device Model Si7820DN Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

cs 740 mosfet

Contextual Info: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features ► 360VPP output voltage for high brightness ► Large output load capability of up to 150nF ► 2.7 to 5.5V operating supply voltage ► Single lithium ion cell compatible ► Adjustable output regulation for dimming

DIP4NS

Abstract: BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G
Contextual Info: 1.0 Design Specifications Inputs Output #1 VinMin=80V Vout1=LED dependant, up to 32V VinMax=135V Iout1=0.6A A bill of materials below describes the parts used on this demonstration board. A schematic and layout have also been included below along with measured performance characteristics. The above restrictions for the input voltage are valid

HV816

Abstract: DIMMABLE HV816SG-G 80nf DR1030 Si7820DN
Contextual Info: Product Summary Sheet HV816 High Voltage, Dimmable EL Lamp Driver VIN CIN 47µF Applications: Laptop keyboards Netbook keyboards Display signs Portable instrumentation equipment ► Electronic organizers LX = 22µH Cooper DR1030-220-R CG 0.1µF ► ► ►

cs 740 mosfet

Abstract: HV816 HV816SG-G DR1030 H816 MO-220 Si7820DN MOSFET "MARKING CODE 7V"
Contextual Info: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features ► 360VPP output voltage for high brightness ► Large output load capability of up to 150nF ► 2.7 to 5.5V operating supply voltage ► Single lithium ion cell compatible ► Adjustable output regulation for dimming

HV816DB1

Abstract: capacitor 100nf 0805 capacitor 100nf 50v 0805 vishay HV816SG-G hv816 DR1030 super fast diode SMA BAS20 BAS20HT1 Si7820DN
Contextual Info: Supertex inc. HV816DB1 High Brightness 20in2 EL Lamp Driver Demoboard General Description The Supertex HV816DB1 is a high brightness EL lamp driver demoboard with the circuitry to drive EL lamp sizes of up to 20in2. The HV816SG-G is in an SOW-16 package with

Contextual Info: Supertex inc. HV816 High Voltage, Dimmable EL Lamp Driver Features 360VPP output voltage for high brightness Large output load capability of up to 150nF 2.7 to 5.5V operating supply voltage Single lithium ion cell compatible Adjustable output regulation for dimming

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455