SI7864ADP Search Results

Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

Si7864ADP-T1-E3

Abstract: Si7864ADP
Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 10 V 29 0.0042 @ VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on)

Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 29 0.0042 at VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)

Si7864ADP

Abstract: Si7864ADP-T1-E3
Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)

Si7864ADP-T1-E3

Abstract: Si7864ADP Si7864DP Si7864DP-T1 Si7864DP-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si7864ADP vs. Si7864DP Description: Package: Pin Out: N-Channel MOSFET PowerPAK SO-8 Identical Part Number Replacements Si7864ADP-T1 Replaces Si7864DP-T1 Lead Pb -free: Si7864ADP-T1-E3 Replaces Si7864DP-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Contextual Info: Si7864ADP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 4.5 V 29 0.0042 @ VGS = 2.5 V 25 Qg (Typ) TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on) PWM (Qgd and Rg) Optimized

74140

Abstract: Si7864ADP 759 vishay
Contextual Info: SPICE Device Model Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

7555

Abstract: 9006 AN609 Si7864ADP
Contextual Info: Si7864ADP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si7864ADP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ.) 57 • • • • • Halogen-free available TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ RDS(on)

si7864adp

Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 @ VGS = 10 V 29 0.0042 @ VGS = 4.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5-V Rated Low 3.5-mΩ rDS(on)

Contextual Info: Si7864ADP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 29 0.0042 at VGS = 2.5 V 25 Qg (Typ) 57 • • • • TrenchFET Power MOSFETS: 2.5 V Rated Low 3.5 mΩ rDS(on)

SI7864ADP-T1-E3

Abstract: si7864adp
Contextual Info: Si7864ADP New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 29 0.0042 @ VGS = 2.5 V 25 Qg (Typ) 57 TrenchFETr Power MOSFETS: 2.5-V Rated Low 3.5-mW rDS(on) PWM (Qgd and Rg) Optimized

Si7336ADP-T1-E3

Abstract: Si7336ADP Si7336ADP-T1 Si7336DP Si7336DP-T1 Si7336DP-T1-E3 Si7864ADP Si7864DP
Contextual Info: Specification Comparison Vishay Siliconix Si7336ADP vs. Si7336DP Description: Package: Pin Out: N-Channel MOSFET PowerPAK SO-8 Identical Part Number Replacements Si7336ADP-T1 Replaces Si7336DP-T1 Lead Pb -Free: Si7336ADP-T1-E3 Replaces Si7336DP-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no