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    SI8466EDB Price and Stock

    Vishay Siliconix SI8466EDB-T2-E1

    MOSFET N-CH 8V 4MICROFOOT
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    DigiKey SI8466EDB-T2-E1 Digi-Reel 3,019 1
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    SI8466EDB-T2-E1 Cut Tape 3,019 1
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    SI8466EDB-T2-E1 Reel 3,000 3,000
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    New Advantage Corporation SI8466EDB-T2-E1 6,000 1
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    Vishay Intertechnologies SI8466EDB-T2-E1

    N-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SI8466EDB-T2-E1)
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    Avnet Americas SI8466EDB-T2-E1 Reel 18 Weeks 3,000
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    Mouser Electronics SI8466EDB-T2-E1 5,363
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    Verical SI8466EDB-T2-E1 3,000 3,000
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    SI8466EDB-T2-E1 540 42
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    Arrow Electronics SI8466EDB-T2-E1 3,000 18 Weeks 3,000
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    SI8466EDB-T2-E1 Cut Strips 540 18 Weeks 1
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    Newark SI8466EDB-T2-E1 Reel 3,000
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    SI8466EDB-T2-E1 Reel 3,000
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    TTI SI8466EDB-T2-E1 Reel 3,000
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    EBV Elektronik SI8466EDB-T2-E1 22 Weeks 3,000
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    SI8466EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8466EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V 3.6A MICROFOOT Original PDF

    SI8466EDB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si8466EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8466EDB AN609, 4096u 0551u 9489u 1053m 1937m 9346m 3395m 5332m

    s15151

    Abstract: No abstract text available
    Text: Si8466EDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) MAX. ID (A) a, e 0.043 at VGS = 4.5 V 5.4 0.046 at VGS = 2.5 V 5.2 0.060 at VGS = 1.5 V 4.6 0.090 at VGS = 1.2 V 3.0 MICRO FOOT 1 x xxx xx


    Original     		PDF Si8466EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s15151

    Untitled

    Abstract: No abstract text available
    Text: Si8466EDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) () Max. ID (A)a, e 0.043 at VGS = 4.5 V 5.4 0.046 at VGS = 2.5 V 5.2 0.060 at VGS = 1.5 V 4.6 0.090 at VGS = 1.2 V 3.0 Qg (Typ.) 6.8 nC TrenchFET Power MOSFET


    Original     		PDF Si8466EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8466EDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8466EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402