SI8473EDB Search Results
SI8473EDB Price and Stock
Vishay Siliconix SI8473EDB-T1-E1MOSFET P-CH 20V 4MICROFOOT |
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SI8473EDB-T1-E1 | Reel |
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Vishay Intertechnologies SI8473EDB-T1-E1 |
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SI8473EDB-T1-E1 | 3,000 |
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SI8473EDB Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SI8473EDB-T1-E1 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V MICROFOOT | Original | 12 |
SI8473EDB Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model Si8473EDB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si8473EDB 18-Jul-08 | |
si8473Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 18-Jul-08 si8473 | |
Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 11-Mar-11 | |
Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 11-Mar-11 | |
AN609
Abstract: si84
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Si8473EDB AN609, 05-Feb-10 AN609 si84 | |
Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si8473EDB 2002/95/EC 8473E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SMD diode s13Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 VDS (V) - 20 TrenchFET Power MOSFET Typical ESD Protection: 3000 V Gate-Source OVP Material categorization: |
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Si8473EDB 8473E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SMD diode s13 | |
SI-8100D
Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
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Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |