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Vishay Intertechnologies SI8824EDB-T2-E1 N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI8824EDB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8824EDB-T2-E1	Reel		14 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.08725	Buy Now
Mouser Electronics	SI8824EDB-T2-E1		17,345			1 $0.46 10 $0.323 100 $0.163 1000 $0.144 10000 $0.087	Buy Now
Newark ()	SI8824EDB-T2-E1	Cut Tape	3,405		5	1 $0.532 10 $0.395 100 $0.235 1000 $0.227 10000 $0.227	Buy Now
	SI8824EDB-T2-E1	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.121	Buy Now
TTI	SI8824EDB-T2-E1	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.086	Buy Now
EBV Elektronik	SI8824EDB-T2-E1			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8824EDBT2E1 N-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI8824EDBT2E1		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8824EDB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SI8824EDB-T2-E1		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.1A MICROFOOT		Original	PDF	160.35KB

SI8824EDB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SPICE Device Model Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si8824EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si8824EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	Si8824EDB AN609, 9497u 8190u 0736m 9485u 7900m 8017m 4353m 03-Sep-14	PDF
Contextual Info: Si8824EDB www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.075 at VGS = 4.5 V 2.9 0.082 at VGS = 2.5 V 2.7 0.090 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 0.175 at VGS = 1.2 V 1.5 VDS (V) 20	Original	Si8824EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Product Group: Vishay Siliconix, MOSFETs / June 2015 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com Vishay Si8824EDB Chipscale N-Channel MOSFET Features Industry-Low RDS ON for 20 V Devices With 1 mm2 or < 0.7 mm2 Outlines in Ratings Down to 1.2 V	Original	Si8824EDB	PDF