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    SIA421DJ Price and Stock

    Vishay Siliconix SIA421DJ-T1-GE3

    MOSFET P-CH 30V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA421DJ-T1-GE3 Cut Tape 55,280 1
    • 1 $1.53
    • 10 $0.967
    • 100 $1.53
    • 1000 $0.46088
    • 10000 $0.46088
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    SIA421DJ-T1-GE3 Digi-Reel 55,280 1
    • 1 $1.53
    • 10 $0.967
    • 100 $1.53
    • 1000 $0.46088
    • 10000 $0.46088
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    SIA421DJ-T1-GE3 Reel 45,000 3,000
    • 1 -
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    • 10000 $0.3625
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    New Advantage Corporation SIA421DJ-T1-GE3 3,000 1
    • 1 -
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    • 1000 -
    • 10000 $0.4685
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    Vishay Intertechnologies SIA421DJ-T1-GE3

    Trans MOSFET P-CH 30V 7.9A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA421DJ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIA421DJ-T1-GE3 Reel 3,000 17 Weeks 3,000
    • 1 -
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    • 10000 $0.3567
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    Mouser Electronics SIA421DJ-T1-GE3 5,967
    • 1 $0.6
    • 10 $0.592
    • 100 $0.512
    • 1000 $0.363
    • 10000 $0.362
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    Verical SIA421DJ-T1-GE3 3,000 3,000
    • 1 -
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    • 10000 $0.3656
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    SIA421DJ-T1-GE3 2,513 16
    • 1 -
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    • 100 $0.3972
    • 1000 $0.3893
    • 10000 $0.3893
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    Arrow Electronics SIA421DJ-T1-GE3 3,000 17 Weeks 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.3615
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    SIA421DJ-T1-GE3 Cut Strips 2,513 17 Weeks 1
    • 1 $0.4301
    • 10 $0.4039
    • 100 $0.3972
    • 1000 $0.3893
    • 10000 $0.3893
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    Newark SIA421DJ-T1-GE3 Cut Tape 3,723 1
    • 1 $0.739
    • 10 $0.615
    • 100 $0.492
    • 1000 $0.492
    • 10000 $0.492
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    Quest Components SIA421DJ-T1-GE3 10
    • 1 $1.4
    • 10 $1.12
    • 100 $1.12
    • 1000 $1.12
    • 10000 $1.12
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    TTI SIA421DJ-T1-GE3 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.358
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    Ameya Holding Limited SIA421DJ-T1-GE3 12,000
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    Avnet Asia SIA421DJ-T1-GE3 19 Weeks 3,000
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    Chip1Stop SIA421DJ-T1-GE3 Cut Tape 2
    • 1 $0.279
    • 10 $0.279
    • 100 $0.279
    • 1000 $0.279
    • 10000 $0.279
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    EBV Elektronik SIA421DJ-T1-GE3 18 Weeks 3,000
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    Vishay Intertechnologies SIA421DJ-T1-GE3.

    Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:7.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:3.5W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SIA421DJ-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIA421DJ-T1-GE3. Reel 3,000 3,000
    • 1 $0.363
    • 10 $0.363
    • 100 $0.363
    • 1000 $0.363
    • 10000 $0.363
    		Buy Now

    Vishay BLH SIA421DJ-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIA421DJ-T1-GE3 13 5
    • 1 -
    • 10 $1.05
    • 100 $1.05
    • 1000 $1.05
    • 10000 $1.05
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    SIA421DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA421DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 12A SC70-6 Original PDF

    SIA421DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SiA421DJ-T1-GE3

    Abstract: No abstract text available
    Text: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA421DJ SC-70 2002/95/EC SC-70-6L-Single SiA421DJ-T1-GE3 11-Mar-11

    a1710

    Abstract: No abstract text available
    Text: SPICE Device Model SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SiA421DJ S-71914Rev. 17-Sep-07 a1710

    Untitled

    Abstract: No abstract text available
    Text: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA421DJ SC-70 SC-70-6L-Single SiA421DJ-T4-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA421DJ SC-70 2002/95/EC SC-70-6L-Single SiA421DJ-T1-GE3 18-Jul-08

    SiA421DJ-T1-GE3

    Abstract: No abstract text available
    Text: New Product SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA421DJ SC-70 SC-70-6L-Single SiA421DJ-T1-GE3 18-Jul-08

    74823

    Abstract: 4835 mosfet 4835 transistor c 6073 AN609
    Text: SiA421DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SiA421DJ AN609 20-Jul-07 74823 4835 mosfet 4835 transistor c 6073

    SiA421DJ-T1-GE3

    Abstract: No abstract text available
    Text: New Product SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiA421DJ SC-70 2002/95/EC SC-70-6L-Single 18-Jul-08 SiA421DJ-T1-GE3

    SiA421DJ-T1-GE3

    Abstract: No abstract text available
    Text: New Product SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA421DJ SC-70 SC-70-6L-Single SiA421DJ-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA421DJ SC-70 SC-70-6L-Single SiA421DJ-T4-Gemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA421DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA421DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiA421DJ SC-70 2002/95/EC SC-70-6L-Single SiA421DJ-T1-GE3 11-Mar-11

    SC706

    Abstract: C1912
    Text: SiA421DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area


    Original     		PDF SiA421DJ SC-70 SC-70-6L-Single SiA421DJ-T4-GE3 SiA421DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SC706 C1912

    7136-1

    Abstract: No abstract text available
    Text: New Product SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.035 at VGS = - 10 V - 12a 0.056 at VGS = - 4.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® SC70 Package


    Original     		PDF SiA421DJ SC-70-6L-Single SiA421DJ-T1-E3 08-Apr-05 7136-1

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA421DJ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SiA421DJ 18-Jul-08

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    MAX17114

    Abstract: GRM21BR60J226K high-voltage high-speed op-amp toshiba lcd power board schematic CDRH8D38NP-100N GRM219R61E225KA
    Text: 19-4882; Rev 0; 8/09 MAX17114 Evaluation Kit The MAX17114 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for thin-film transistor liquid-crystal display (TFT LCD) TV panels. The EV kit


    Original     		PDF MAX17114 MAX17114 GRM21BR60J226K high-voltage high-speed op-amp toshiba lcd power board schematic CDRH8D38NP-100N GRM219R61E225KA

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    MAX17122

    Abstract: transistor equivalent ksh200 fault finding all type of lcd tv file ksh200 equivalent MAX17122ETL thermistor 180n ksh200 TRANSISTOR equivalent max17122 diagram 234A2 CDRH8D28NP-220N
    Text: TION KIT EVALUA BLE IL AVA A 19-4951; Rev 1; 11/09 Step-Up, Step-Down Regulator, Gate-On Charge Pump, and Boost-Buck Regulator for TV TFT LCD Display Features The MAX17122 multiple-output power-supply IC generates all the supply rails for thin-film transistor TFT liquidcrystal display (LCD) TV panels. It can operate from 8V


    Original     		PDF MAX17122 MAX17122 transistor equivalent ksh200 fault finding all type of lcd tv file ksh200 equivalent MAX17122ETL thermistor 180n ksh200 TRANSISTOR equivalent max17122 diagram 234A2 CDRH8D28NP-220N

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X

    Siliconix mosfet guide

    Abstract: list of P channel power mosfet Siliconix Selection Guide Si147DH Si1471DH 1206-8 chipfet layout P-channel power mosfet SO-8 power selector guide SiA513DJ Si1065X
    Text: N & P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SC-75 SC-75A SC-89 Siliconix mosfet guide list of P channel power mosfet Siliconix Selection Guide Si147DH Si1471DH 1206-8 chipfet layout P-channel power mosfet SO-8 power selector guide SiA513DJ Si1065X

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836