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    SIHA25N50E Search Results

    SIHA25N50E Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHA25N50E-E3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-220FP Original PDF 162.79KB
    SIHA25N50E-GE3
    Vishay Siliconix N-CHANNEL 500V Original PDF 161.55KB 8
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    Vishay Siliconix SIHA25N50E-GE3

    N-CHANNEL 500V
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    Vishay Siliconix SIHA25N50E-E3

    MOSFET N-CH 500V 26A TO220
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    Vishay Intertechnologies SIHA25N50E-E3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHA25N50E-E3)
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    Vishay Intertechnologies SIHA25N50E-GE3

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    SIHA25N50E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original
    SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original
    SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original
    SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and


    Original
    SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E PDF

    Device Application Note AN849

    Abstract: AN849 planar mosfet
    Contextual Info: VISHAY SILICONIX www.vishay.com MOSFETs Device Application Note AN849 Power MOSFET Basics Understanding Superjunction Technology by Sanjay Havanur and Philip Zuk Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching


    Original
    AN849 Device Application Note AN849 AN849 planar mosfet PDF