SIHA25N50E Search Results
SIHA25N50E Price and Stock
Vishay Siliconix SIHA25N50E-GE3N-CHANNEL 500V |
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SIHA25N50E-GE3 | Cut Tape | 996 | 1 |
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Vishay Siliconix SIHA25N50E-E3MOSFET N-CH 500V 26A TO220 |
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SIHA25N50E-E3 | Tube | 806 | 1 |
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Vishay Intertechnologies SIHA25N50E-E3N-CHANNEL 500V - Tape and Reel (Alt: SIHA25N50E-E3) |
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SIHA25N50E-E3 | Reel | 20 Weeks | 1,000 |
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SIHA25N50E-E3 | 387 |
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SIHA25N50E-E3 | Tube | 1,000 |
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SIHA25N50E-E3 | 21 Weeks | 50 |
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Vishay Intertechnologies SIHA25N50E-GE3N-CHANNEL 500V - Tape and Reel (Alt: SIHA25N50E-GE3) |
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SIHA25N50E-GE3 | Reel | 20 Weeks | 1,000 |
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SIHA25N50E-GE3 |
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SIHA25N50E-GE3 | Bulk | 999 | 1 |
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SIHA25N50E-GE3 | Reel | 1,000 |
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SIHA25N50E-GE3 | 1 |
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SIHA25N50E Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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SIHA25N50E-E3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-220FP | Original | 162.79KB | ||||
SIHA25N50E-GE3 | Vishay Siliconix | N-CHANNEL 500V | Original | 161.55KB | 8 |
SIHA25N50E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses |
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SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses |
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SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses |
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SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: • Continued high performance low switching and |
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SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E | |
Device Application Note AN849
Abstract: AN849 planar mosfet
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AN849 Device Application Note AN849 AN849 planar mosfet |