SIHF610S Search Results
SIHF610S Price and Stock
Vishay Intertechnologies SIHF610S-GE3Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
SIHF610S-GE3 | 1 |
|
Get Quote | |||||||
![]() |
SIHF610S-GE3 | 9 Weeks | 50 |
|
Buy Now |
SIHF610S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRF610S, SiHF610S 2002/95/EC O-263) 11-Mar-11 | |
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRF610S, SiHF610S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRF610S, SiHF610S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRF610SContextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRF610S, SiHF610S O-263) 2002/95/EC 11-Mar-11 IRF610S | |
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating |
Original |
IRF610S, SiHF610S SMD-220 12-Mar-07 | |
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRF610S, SiHF610S 2002/95/EC O-263) 11-Mar-11 | |
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating |
Original |
IRF610S, SiHF610S SMD-220 18-Jul-08 | |
IRF610SContextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the |
Original |
IRF610S, SiHF610S O-263) 18-Jul-08 IRF610S | |
AN609
Abstract: IRF610S
|
Original |
IRF610S SiHF610S AN609, 01-Mar-10 AN609 | |
Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21 |
Original |
IRF610S, SiHF610S 2002/95/EC O-263) 18-Jul-08 | |
Contextual Info: IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 1.5 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single G G D D2PAK (TO-263) |
Original |
IRF610S, SiHF610S IRF610L, SiHF610L O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |