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    Vishay Siliconix SIHF614S-GE3

    SIHF614S-GE3 N-channel MOSFET Transistor, 2.7 A, 250 V, 3-Pin D2PAK | Siliconix / Vishay SIHF614S-GE3
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    RS SIHF614S-GE3 Bulk 100
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    Vishay Intertechnologies SIHF614S-GE3

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    Bristol Electronics SIHF614S-GE3 900
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    Quest Components SIHF614S-GE3 720
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    SIHF614 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF614

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration


    Original     		PDF IRF614, SiHF614 O-220 O-220 18-Jul-08 IRF614

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF614S, SiHF614S SMD-220 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) O-26electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) • • • • • • • • 250 VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF614S, SiHF614S SMD-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements Configuration


    Original     		PDF IRF614, SiHF614 O-220 12-Mar-07

    AN609

    Abstract: IRF614S
    Text: IRF614S_RC, SiHF614S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF614S SiHF614S AN609, 12-Mar-10 AN609

    910.26

    Abstract: IRF614S
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF614S, SiHF614S O-263) 18-Jul-08 910.26 IRF614S

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    AN609

    Abstract: IRF614
    Text: IRF614_RC, SiHF614_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF614 SiHF614 AN609, 09-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF614S, SiHF614S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF614S, SiHF614S 2002/95/EC O-263) 11-Mar-11

    IRF614

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB 11-Mar-11 IRF614

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF614, SiHF614 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling Qgd (nC) 4.5 • Simple Drive Requirements


    Original     		PDF IRF614, SiHF614 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A