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Vishay Siliconix SIHF634S-GE3 SIHF634S-GE3 N-channel MOSFET Transistor, 8.1 A, 250 V, 3-Pin D2PAK \| Siliconix / Vishay SIHF634S-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIHF634S-GE3	Bulk			10	1 - 10 $1 100 $0.95 1000 $0.85 10000 $0.85	Get Quote
Vishay Intertechnologies SIHF634STRR-GE3 Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHF634STRR-GE3				1	1 $1.08 10 $0.97 100 $0.77 1000 $0.7 10000 $0.7	Get Quote
Vishay Intertechnologies SIHF634S-GE3 MOSFET N-CHANNEL 250V (Alt: SIHF634S-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
EBV Elektronik	SIHF634S-GE3			14 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIHF634S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	PDF	IRF634S, SiHF634S 2002/95/EC O-263) 18-Jul-08
AN609 Abstract: IRF634S SiHF634S Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF634S SiHF634S AN609, 6863m 8651m 0259m 9396m 3890m 1419m 6299m AN609
Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching	Original	PDF	IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11
4538 Abstract: AN609 IRF634S SiHF634S Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRF634S SiHF634S AN609, 12-Mar-10 4538 AN609
SiHF634S Abstract: smd e3a IRF634S SiHF634S-E3 SMD-220 SMD DIODE marking AB Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	PDF	IRF634S, SiHF634S SMD-220 SMD-220 18-Jul-08 smd e3a IRF634S SiHF634S-E3 SMD DIODE marking AB
smd diode marking 51 Abstract: diode smd marking 51 SiHF634S Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating	Original	PDF	IRF634S, SiHF634S SMD-220 12-Mar-07 smd diode marking 51 diode smd marking 51
1047 diode Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF634S, SiHF634S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1047 diode
Untitled Abstract: No abstract text available Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21	Original	PDF	IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11