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SIHFB20N50K Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHFB20N50K-E3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 20A TO220AB	Original	PDF	334.67KB

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Vishay Siliconix SIHFB20N50K-E3 MOSFET N-CH 500V 20A TO220AB
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Vishay Intertechnologies SIHFB20N50K-E3 MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHFB20N50K-E3)
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Avnet Americas	SIHFB20N50K-E3	Reel		111 Weeks	1,000	1 - 10 - 100 - 1000 $2.75 10000 $2.59	Buy Now

SIHFB20N50K Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFB20N50K Abstract: SiHFB20N50K SiHFB20N50K-E3 Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 18-Jul-08 IRFB20N50K SiHFB20N50K-E3	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K 2002/95/EC O-220 O-220 IRFB20N50KPbF SiHFB20N50hay 11-Mar-11	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 O-220 IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50merchantability, 12-Mar-07	PDF
IRFB20N50KPbF Abstract: IRFB20N50K SiHFB20N50K SiHFB20N50K-E3 Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 O-220lectual 18-Jul-08 IRFB20N50KPbF IRFB20N50K SiHFB20N50K-E3	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFB20N50K Abstract: 91101 IRFB20N50 IRFB20N50KPbF Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K 2002/95/EC O-220 O-220 IRFB20N50KPbF SiHFB20N50trademarks 2011/65/EU 2002/95/EC. 2002/95/EC IRFB20N50K 91101 IRFB20N50	PDF
IRFB20N50K Abstract: SiHFB20N50K AN609 Contextual Info: IRFB20N50K_RC, SiHFB20N50K_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFB20N50K SiHFB20N50K AN609, 16-Apr-10 AN609	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 18-Jul-08	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.21 Qg (Max.) (nC) 110 Qgs (nC) 33 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	IRFB20N50K, SiHFB20N50K O-220 O-220 IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50any 18-Jul-08	PDF