SIHFIBC40G Search Results

SIHFIBC40G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFIBC40G SiHFIBC40G AN609, 31-May-10	PDF
IRFIBC40 Abstract: TO-220 FULLPAK Package SiHFIBC40G Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFIBC40 TO-220 FULLPAK Package	PDF
IRFIBC40 Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 18-Jul-08 IRFIBC40 IRFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G	PDF
SiHFIBC40G Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 12-Mar-07	PDF
IRFIBC40G Abstract: SiHFIBC40G SiHFIBC40G-E3 Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 11-Mar-11 IRFIBC40G SiHFIBC40G-E3	PDF
IRFIBC40G Abstract: SiHFIBC40G SiHFIBC40G-E3 81273 Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 18-Jul-08 IRFIBC40G SiHFIBC40G-E3 81273	PDF
SiHFIBC40G Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SiHFIBC40G Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 12-Mar-07 SiHFIBC40G	PDF
SiHFIBC40G Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFIBC40G	PDF
SiHFIBC40G Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiHFIBC40G	PDF
SiHFIBC40G Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating	Original	IRFIBC40G, SiHFIBC40G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiHFIBC40G Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 11-Mar-11 SiHFIBC40G	PDF
SiHFIBC40G Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFIBC40GLC, SiHFIBC40GLC O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFIBC40G	PDF
N 440 Abstract: AN609 IRFIBC40GLC SiHFIBC40GLC Contextual Info: IRFIBC40GLC_RC, SiHFIBC40GLC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFIBC40GLC SiHFIBC40GLC AN609, 31-May-10 N 440 AN609	PDF