SIHFSL9N60A Search Results
SIHFSL9N60A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFSL9N60A
Abstract: SiHFSL9N60A SiHFSL9N60A-E3
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Original |
IRFSL9N60A, SiHFSL9N60A 2002/95/EC O-262) 11-Mar-11 IRFSL9N60A SiHFSL9N60A-E3 | |
SiHFSL9N60AContextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
Original |
IRFSL9N60A, SiHFSL9N60A O-262) 12-Mar-07 | |
Contextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
Original |
IRFSL9N60A, SiHFSL9N60A 2002/95/EC O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
SiHFSL9N60AContextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
Original |
IRFSL9N60A, SiHFSL9N60A O-262) 2002/95/EC 18-Jul-08 | |
9059M
Abstract: AN609 IRFSL9N60A SiHFSL9N60A
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Original |
IRFSL9N60A SiHFSL9N60A AN609, 1826m 9059m 6739m 5244m 3538m 9463m 4973m 9059M AN609 | |
Contextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
Original |
IRFSL9N60A, SiHFSL9N60A O-262) 2002/95/EC 11-Mar-11 | |
SiHFSL9N60A
Abstract: IRFSL9N60A SiHFSL9N60A-E3
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Original |
IRFSL9N60A, SiHFSL9N60A O-262) 18-Jul-08 IRFSL9N60A SiHFSL9N60A-E3 | |
SiHFSL9N60AContextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* |
Original |
IRFSL9N60A, SiHFSL9N60A O-262) 18-Jul-08 | |
electronic regulator 90362Contextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
Original |
IRFSL9N60A, SiHFSL9N60A O-262) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 electronic regulator 90362 | |
Contextual Info: IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness |
Original |
IRFSL9N60A, SiHFSL9N60A 2002/95/EC O-262) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |