SIHG47N60S Search Results

SIHG47N60S Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
SIHG47N60S-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 47A TO247AC		Original	PDF		7

SIHG47N60S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiHG47N60S Abstract: ktp12 Contextual Info: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 • 100 % Avalanche Tested RoHS 216 • Ultra Low Gate Charge COMPLIANT Qgs (nC) 39 • Ultra Low Ron Qgd (nC) 57 • Compliant to RoHS Directive 2002/95/EC	Original	SiHG47N60S 2002/95/EC O-247AC SiHG47N60S-E3 11-Mar-11 ktp12	PDF
pfc power supply Contextual Info: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested	Original	SiHG47N60S 2002/95/EC O-247AC O-247AC SiHG47N60S-E3 11-Mar-11 pfc power supply	PDF
SiHG47N60S Abstract: TRANSFORMER 220 to 14V ktp12 SIHG47N60S-E3 Contextual Info: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package	Original	SiHG47N60S O-247AC 2002/95/EC O-247AC SiHG47N60S-E3 18-Jul-08 TRANSFORMER 220 to 14V ktp12	PDF
Contextual Info: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfets O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses	Original	SiHG47N60S-E3 2002/95/EC SiHG47N60S S11-1882-Rev. 26-Sep-11 VMN-PT0239-1112	PDF
Contextual Info: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested	Original	SiHG47N60S 2002/95/EC O-247AC SiHG47electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
sihg47n60 Contextual Info: SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation One 650 RDS(on) max. at 25 °C () VGS = 10 V 0.07 • Low Figure-of-Merit Ron x Qg RoHS COMPLIANT Qg max. (nC) 216 • 100 % Avalanche Tested	Original	SiHG47N60S 2002/95/EC O-247AC O-247AC SiHG47N60S-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihg47n60	PDF
sihg47n60s-e3 Abstract: SIHG47N60S Contextual Info: SiHG47N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 650 V RDS(on) () VGS = 10 V 0.07 Qg (Max.) (nC) 216 Qgs (nC) 39 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Lowest RDS(on) for TO-247AC Package	Original	SiHG47N60S O-247AC 2002/95/EC O-247AC SiHG47N60S-E3 18-Jul-08	PDF
AN609 Abstract: SiHG47N60S Contextual Info: SiHG47N60S_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHG47N60S AN609, 9561m 2375m 7316m 0071m AN609	PDF
Ultra Low Qg High Current Contextual Info: V ishay I ntertechn o l o g y, I nc . MOSFETs - Able to Withstand High Energy Pulses AND TEC I INNOVAT O L OGY SiHG47N60S-E3 N HN High-Voltage Power mosfet O 19 62-2012 600-V N-Channel MOSFETs Use Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses	Original	SiHG47N60S-E3 2002/95/EC SiHG47N60S S11-1882-Rev. 26-Sep-11 VMN-PT0239-1112 Ultra Low Qg High Current	PDF
sihg47n60s-e3 Abstract: power MOSFET INVERTER Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Super Junction Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 47 A, 600 V, RDS on max. = 70 mW at VGS = 10 V • Low gate charge: Qg max. = 216 nC	Original	SiHG47N 2002/95/EC SiHG47N60S VMN-PT0239-1010 sihg47n60s-e3 power MOSFET INVERTER	PDF