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    Vishay Siliconix SIJ458DP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8
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    SIJ458DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIJ458DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A 8-SOIC Original PDF

    SIJ458DP Datasheets Context Search

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    4810 mosfet

    Abstract: No abstract text available
    Text: New Product SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0022 at VGS = 10 V 60 0.0026 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 40.6 nC PowerPAK SO-8L Single • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiJ458DP 2002/95/EC SiJ458DP-T1-GE3 18-Jul-08 4810 mosfet

    4810 mosfet

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiJ458DP 18-Jul-08 4810 mosfet

    4435 m

    Abstract: 4435 4435 mosfet 5218 5218 a AN609
    Text: SiJ458DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiJ458DP AN609, 29-Jan-10 4435 m 4435 4435 mosfet 5218 5218 a AN609