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    Vishay Siliconix SIS414DN-T1-GE3

    MOSFET N-CH 30V 20A PPAK1212-8
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    SIS414DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS414DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20A 1212-8 PPAK Original PDF

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    SIS414DN

    Abstract: No abstract text available
    Text: SPICE Device Model SiS414DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS414DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sis414DN

    Abstract: 1047 diode
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 25lectual 18-Jul-08 1047 diode

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 11-Mar-11

    sis414

    Abstract: SiS414DN PPAK 1212 SIS4
    Text: New Product SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.016 at VGS = 4.5 V 20 0.020 at VGS = 2.5 V 20 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiS414DN 2002/95/EC SiS414DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sis414 PPAK 1212 SIS4

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS414DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS414DN 18-Jul-08

    66804

    Abstract: No abstract text available
    Text: SiS414DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiS414DN AN609, 2606m 6081m 7158m 6592m 6632m 3872u 0120m 66804

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836