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Vishay Intertechnologies SIS438DN-T1-GE3 N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIS438DN-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIS438DN-T1-GE3	Reel		20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.26445	Buy Now
Mouser Electronics	SIS438DN-T1-GE3		9,911			1 $0.93 10 $0.638 100 $0.464 1000 $0.348 10000 $0.279	Buy Now
Verical	SIS438DN-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.4547	Buy Now
Newark ()	SIS438DN-T1-GE3	Cut Tape	8,197		1	1 $0.784 10 $0.749 100 $0.609 1000 $0.548 10000 $0.548	Buy Now
	SIS438DN-T1-GE3	Reel			3,000	1 $0.4 10 $0.4 100 $0.4 1000 $0.4 10000 $0.363	Buy Now
TTI	SIS438DN-T1-GE3	Reel	42,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.267	Buy Now

TME	SIS438DN-T1-GE3				1	1 $0.737 10 $0.58 100 $0.461 1000 $0.43 10000 $0.43	Get Quote
EBV Elektronik	SIS438DN-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SIS438DN-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.377	Buy Now
Vishay Siliconix SIS438DN-T1-GE3 MOSFET N-CH 20V 16A PPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
New Advantage Corporation	SIS438DN-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.4538	Buy Now

SIS438DN Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIS438DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 16A PPAK 1212-8		Original	PDF

SIS438DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11	PDF
Contextual Info: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiS438DN 18-Jul-08	PDF
Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	SiS438DN 2002/95/EC SiS438DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiS438DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	SiS438DN 2002/95/EC SiS438DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	SiS438DN 2002/95/EC SiS438DN-T1-GE3 11-Mar-11	PDF
SIS438DN-T1-GE3 Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	SiS438DN 2002/95/EC SiS438DN-T1-GE3 18-Jul-08	PDF
9934 Abstract: 2103 datasheet AN609 Contextual Info: SiS438DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiS438DN AN609, 09-Apr-09 9934 2103 datasheet AN609	PDF
Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	SiS438DN 2002/95/EC SiS438DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater	Original	LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead 3350p com/LTC3350	PDF
Sanyo supercapacitors Abstract: maxwell balancing Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors	Original	LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350f Sanyo supercapacitors maxwell balancing	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	VMN-PT0105-1007	PDF
Contextual Info: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors	Original	LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350fa	PDF

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF