T03PBL Search Results

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

TRANSISTOR T0220

Abstract: 2SC4429 2sc3990
Contextual Info: S WI TC HI NG POWER TRANSISTOR F e a t u r e s ☆ Short switching time ☆ High br ea kdown voltage ☆ Wide ASO ☆ High reliability because of planar type ate H i g h - S p e e d Type U s e ☆Switching regulators ☆Motor control MBIT P r o c e s s Package

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

2SC3998

Abstract: using of damper in Horizontal Output Transistor 6-10T 2SC4891 transistor 2SC3998 2sc3997 2sc3996 IT0-22 2sc5042
Contextual Info: SAf/YO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 2 ajc S t i - u c t u r e a n d Structure patterned with a large number of units consisting of base island £nd emitter region as shown

horizontal deflection

Contextual Info: TV/CRT Display Application Transistors II Absolute maximum ratings Package Device Application type VCBO (V) VcEO (V) Vebo (V) ic (A) m Electrical characteristics (Ta = 25 deg. C) Tj Pc VcEfMfj @ ! c - I b (deg. C) VcEjsat) (V) tire @ Vce ic tf max tc (A)

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

M9412

Abstract: 2SC5047
Contextual Info: SANIYO T r a n s i s t o r s f o r Very Hig h - D e f i n i t i o n CRT D i s p l a y H o r i z o n t a l D e f l e c t i o n Output Use 2 otc S t r u c t u r e a n d S t ru c tu r e p a tt e r n e d with a large number of u n i t s c o n s i s t i n g of base

TO-126LP

Contextual Info: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle

transistor 2SC3998

Contextual Info: SILICON TRANSISTORS FOR TV/VTR USE VERY HIGH-DEFINITION DISPLAY HORIZONTAL DEFLECTION OUTPUT, VIDEO OUTPUT APPLICATIONS : New product Classified by package and arranged in order of increasing P q . Minus sign for PNP is omitted due to space limitations.

ce 2826 ic

Contextual Info: O rdering num ber: EN 2826 Jo.2826 HPA100R NPN Triple Diffused Planar Silicon Composite Transistor Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • Highspeed tf typ = 100ns • High breakdown voltage (Vcbo = 1500V)

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

2sc3153

Abstract: 2SJ335 transistor 2sc4460 2SC4427 2sc4460 2SC3151 2SC3152 2SC3277 2SC3448 2SC3449
Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta « 25 ~C hre@VCE • 1C VCBO (V) VCEO (V) V ebo (V) (A) (W ) A 1C PC fr@ VC E ■ IC tf(toff) max U s) (A) fr (MHz) 2SC3151 T03PB Switching requlator

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

2SK3099

Abstract: 2SK2434 2SK2617 2SJ522 2SK3092 2SK3093 2SK3094 2SK3095 2SK3096 2SK3097
Contextual Info: SAfiYO L a r g e - s i g n a l Power M0SFETs 4 The Sanyo J-MOS s e r i e s u t i l i z e s Sanyo’ s own f in e f a b r ic a t io n process fo r power d evices to develop an e n tir e s e r ie s of u ltr a h ig h perform ance power d e v ic e s cap ab le o f high v o lta g e , high speed and larg e cu rren t operation.

Contextual Info: SA0YO T r a n s i s t o r s for V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t Use Transistors for CRT horizontal deflection output use must be of high-breakdown voltage.high-current,high-speed

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

sanyo transistor tt series

Abstract: TO225 LEAD FORMING TRANSISTORS SANYO sanyo transistor SSFP package 2SB1269 2SB1449 2SB1450 2SC5264 2SC5420
Contextual Info: Power Transistor Surface Mount Package S M P Surface Mount Power In r e c e n t y e a r s s u r f a c e m ount s e m ic o n d u c to r p ro d u c ts have found wide a p p li c a t io n from s m a ll - s i g n a l consum er equipm ent to h ig h -p o w e r i n d u s t r i a l e q u ip m e n t.

transistor 500v

Abstract: 2SC3989 ic24a
Contextual Info: Ordering number: EN 2556 2SC3989 NPN Triple Diffused Planar Silicon Transistor SA i YO i 500V/25A Switching Regulator Applications Features . High breakdown voltage, high reliability . Fast switching speed tf: 0.1 ps typ . Adoption of MBIT process Absolute Maxinun Ratings at Ta=25 C

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

HD2A4A

Abstract: HC2A4A HD2A4M HD2F2Q HD2L3N GN1L4M HD2L2Q HPA150R HC1A3M HN1A01F
Contextual Info: - 314 - M X Ë t ë Ë? £ tt g S3 m Vqbo Ta=25°C, *EP(iTc=25(tD Iccoo Vc e o f Pc Pc* (W) (W) \îTiSX; If 'CB (V) -0.2 -0. 005 -0.00025 -0.2 -0. 005 -0.00025 -0.3 -0.005 -0.00025 -0.005 -0.2 -0. 005 -0.00025 -5 -0.005 -0.2 -0.005 -0.00025 195 -5 -0.005

C4106 transistor

Abstract: C4106 transistor c3457 B824 transistor c4106 semiconductor transistor c3447 transistor c4106 transistor d1061 D1060 d1061
Contextual Info: SA\YO T0-220MF Mini Fin Power Transistor Series Features Sanyo power tra n sisto r case o utline T0-220MF (Mini Fin) is a sm all-sized package suited for mounting on electronic equipment th at is lim ited in height. When mounted on the board, the height above the board is approximately 10mm lower

SPD221P

Abstract: SPD221R sanyo transistor SGD102 SGD102T SPD121 MCP6 Marking sanyo SPD121P SPD122P SPD221
Contextual Info: S A f/ Y O GaAs Di odes 1 j f c GaAs Schot tky Bar-r-ier Di odes Packaged Type The Sanyo SPD Series are packaged type GaAs Schottky barrier diodes designed for converters, modulators,detectors that can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18.0GHz).

sc3152

Abstract: 2SC4458 transistor 2SC4460 M
Contextual Info: SAfÊYO SWITCHING POWER TRANSISTOR SERI ES Nq 1 e a t u r e s ♦ S h o r t switching time ♦ High breakdown voltage ♦ Hide ASO ♦ High reliability because of planar d U s e ♦ Switching regulators ♦ Motor cont rol type T y p e »sign(Tc-25T! ) Electrical