T3905 Search Results

MMT3904

Abstract: M3904 MMCM3903 MMCM3904 MMT3903 MMT3905 MMT3906
Contextual Info: MMT3903, MMT3904 SILICON MMCM3903, MMCM3904 (ceramic package) MICRO-T NPN SILICON ANNULAR TRANSISTORS . . . designed for general purpose switching and am plifier applications and for complementary circu itry w ith PNP type M M T3905 and M M T3906 where high-density packaging is required.

Contextual Info: FMM T3905 FMM T3906 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: T3905 - 2W FMMT3906 - 2A ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb = 25°C

sfnf101a

Abstract: electrical symbols
Contextual Info: SOLÎTRON DEVICES INC 7Ü DE | Û3t.flti02 O Q O l ^ l b | T-39-05 SWITCH MOS SFNF101A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS *DM VGS PD XL ^J oper T „ stg “ 100 Drain Current, Continuous @ T »25°C c Drain Current, Pulsed 1 .5 4.5 A Voltage, Gate-to-Source

2N6661

Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

MMCM3905

Abstract: MMCM3906 MMT3903 MMT3904 MMT3905 MMT3906 si109
Contextual Info: M M T 3 9 0 5 , M M M C M M 3 9 0 5 , SILICON T 3 9 0 6 M M C M 3 9 0 6 ( c e r a m ic p a c k a g e ) MICRO-T PNP SILICO N A N N U LA R P N P S IL IC O N S W IT C H IN G A N D A M P L IF IE R T R A N S IS T O R S T R A N SISTO R S . . . designed for general purpose switching and amplifier applications

FMMT3906

Abstract: SOT213 FMMT3905 ferranti BFQ31 FMMT3903 FMMT3904 PNP 3906 SOT23 T3905 BCW2
Contextual Info: FERRANTI semiconductors T3905 FMMT3906 PNP Silicon Planar General Purpose Switching Transistors D E S C R IP T IO N These d e vice s are intended fo r use in sm all and m edium sign a l a m p lifica tio n a p p lica tio n s fro m d.c. to radio frequencies.

Contextual Info: 32E D • Ö23b32ü 0017107 s m s i p BSP 149 SIPMOS N Channel MOSFET T - 3 *7 Preliminary Data • SIPMOS - depletion mode • Drain-source voltage • Continuous drain current • Drain-source on-resistance • Total power dissipation Type M arking O rdering code for

Contextual Info: 32E D • Ö23b320 QG171ÜS «SIP SIP M O S N Channel MOSFET _ SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIP M O S - depletion mode • Drain-source voltage • Continuous drain current Vfcs = 600V /D = 0.100A • Drain-source on-reslstance • Total power dissipation

Contextual Info: BSE I • ÖS3b3Ea CJ017114 T SIPMOS N Channel MOSFET ISIP r - t f - o s - BSP 296 SIEMENS/ SPCL-. SEMICONDS • SIPMOS - enhancement mode • Draln-source voltage Vfo = 100V • Continuous drain current / „ = 1.0A • Drain-source on-resistance • Total power dissipation

Contextual Info: 32E D • Û23b32ü 00170=10 S H S I P SIPM O S N Channel MOSFET SIEMENS/ SPCL-, SEMICONDS T-21- é>5~ _ BSP 125 Preliminary Data • S IP M O S - enhancement mode • Drain-source voltage Vfes = 600V • Continuous drain current lB = .11OA • Drain-source on-resistance

Contextual Info: 32E D • Ô53b320 □ 01711=1 1 ■ SIP BSP 297 SIPMOS N Channel MOSFET SIEMENS/ SPCLi SEMICONDS T - M - O S * • SIPMOS - enhancement mode • Drain-source voltage Vis = 200V • Continuous drain current l 0 - 0.6A • Drain-source on-resistance fWon> = 2 .0 0

MGFK30M4045

Abstract: E 212 fet DC bias of gaas FET
Contextual Info: TL MITSUBISHI {DISCRETE SC3- D E ltS M T flH T 0D1G142 7 MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED 6249829 M ITSU BISH I D ISC R ETE SC 9 1 D 10142 D T-39-ôS DESCRIPTION The MGFK30M4045 is an internally impedance-matched

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

im7984-3

Abstract: IM-7984-3 Avantek, Inc
Contextual Info: □ fc,E D I AVANTEK INC IM-7984-3 3 Watt, 7.9-8.4 GHz Internally Matched Power GaAs FET 0A V A N T E K Features • • • • • • GÜQbOEb «1 | T-39-05 Avantek IMFET Package T.9-8.4 GHz Minimum Bandwidth Internally Matched Input/Output Impedance

sfnf201a

Contextual Info: SOLITRON DEVICES INC _ ' 70 »Flögböboa 0002027 0 |~T-39-05 SWITCH MOS SFNF201A POWER MOS PACKAGE TO-39 MAXIMUM RATINGS VDS *D XDM VGS PD lL TJ oper T . stg UNITS PARAMETER SYMBOL Voltage, Drain to Source Drain Current, Continuous @ Tc=25°C Drain Current, Pulsed

sfnf201c

Contextual Info: SOLITRON DEVICES INC 70 » e | flBt.flbD2 ODOaDET 3 | S W IT C H T-39-05 IV IO S N' SFN F201C POWER MOS PACKAGE TO-39 MAXIMUM RATINGS VDS *D IDM > CO O ' PD XL ^J oper T stg UNITS PARAMETER SYMBOL Voltage, Drain to Source 2 00 V Drain Current, Continuous @ Tc=25°C

T-3V05

Abstract: T3905 2N7012
Contextual Info: 33E D SILICONIX INC f f f S ilico n ix 0254735 OOlhOlO 1 « S I X • 2N7012 incorporated 'T '- S ^ - O S N-Channel Enhancement Mode Transistor 4-PIN DIP Similar to TO-250 TOP VIEW PRODUCT SUMMARY V(BR|DSS 60 T 0.35 *D (A) 1.2 1 GATE 2 SOURCE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

VN1220

Contextual Info: SUPERTEX INC 3 SE D • 07732^5 00QE27b ö M S T X T -3 9 -0 5 N-Channel Enhancement-Mode Vertical DMOS FETs 7 “- 39 - / / Ordering Information Standard Commercial Devices t O rd er N um b er / Package R d S<ON '□ ON) BV oqs (m ax) (m in) TO-39 TO-220

Contextual Info: SOLITRON DEVICES INC 7 SFNF061B 70 IDE | 0 3 L . a b O E ODOl^t. RATINGS UNITS PA R A M E T E R SYMBOL Voltage, D r a i n to Source D r a i n Current, Continuous @ T =25°C c D r a i n Current, Pulsed ^J oper T stg Voltage, G a t e - to-Sou r c e XDSS V 0N)

Contextual Info: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation

MARKING CODE A06

Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Contextual Info: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

AR8121-AL1E

Abstract: IT8502 IT8502E 2822A RT8206A SLB95 cantiga gl40 CX20582 maa7824 mb39a132
Contextual Info: 5 D C B A 4 01 Block Diagram 61 02 System Setting 62 USB CONN 03 POWER SEQUENCE 63 * 04 CPU-Penryn HOST 64 * 05 CPU-Penryn(PWR) 65 06 * 66 * 07 Cantiga(HOST) 67 DEBUG CONN 08 Cantiga(DMI & CFG) 68 DC & BAT IN 09 Cantiga(GRAPHIC) 69 * 10 Cantiga(DDR2) 70 *