MGFK30M4045 Search Results

MGFK30M4045 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFK30M4045		Unknown	High Frequency Device Data Book (Japanese)		Scan	PDF
MGFK30M4045		Unknown	FET Data Book		Scan	PDF

MGFK30M4045 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MGFK30M4045 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A)1.2 P(D) Max. (W)7.5 Maximum Operating Temp (øC)175 I(DSS) Min. (A)600m I(DSS) Max. (A)1.2 @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.	Original	PDF	MGFK30M4045
MGFK30M4045 Abstract: E 212 fet DC bias of gaas FET Text: TL MITSUBISHI {DISCRETE SC3- D E ltS M T flH T 0D1G142 7 MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFK30M 4045 FOR MICROWAVE PO W ER A M P LIFIE R S IN TERN A LLY MATCHED 6249829 M ITSU BISH I D ISC R ETE SC 9 1 D 10142 D T-39-ôS DESCRIPTION The MGFK30M4045 is an internally impedance-matched	OCR Scan	PDF	0D1G142 GFK30M MGFK30M4045 E 212 fet DC bias of gaas FET
MGFK30M4045 Abstract: mgfx35v0510 MP6704 MGFX35V0005 MGFK35M4045 M-Typ MGFK33M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 Text: - 156 - M € ± € m 1 & a f ï t * 1 1/ h' ü V A * £ (V) 9t * të S P d /P c h (A) * * (W) MGFK30M4045 MW PA GaAs N D -14 GDO -14 0 1. 2 D 7.5 MGFK33M4045 MW PA GaAs N D -14 G DO -14 0 2.4 D 15 MW PA GaAs N D -14 GDO -14 0 4. 5 D 30 MGFK35V2228	OCR Scan	PDF	MGFK30M4045 MGFK33M4045 MGFK35M4045 MGFK35V2228 MGFK35V2732 MGFK35V4045 MGFK37V4Ã MGFX38V0005 MGFX38V0510 MGFX38V1722 mgfx35v0510 MP6704 MGFX35V0005 M-Typ
MGFK30M4045 Abstract: No abstract text available Text: ¿.MITSUBISHI MGFK30MXXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The MGFK30MXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • Flip-chip mounted • High output power	OCR Scan	PDF	MGFK30MXXXX MGFK30MXXXX MGFK30M4045 MGFK30M4045-01 MGFK30M4045