TB334 Search Results

Contextual Info: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

regulator 4468

Abstract: HP4410DY HP4410DYT TB334
Contextual Info: HP4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

4469 mosfet

Abstract: HP4936DY HP4936DYT TB334
Contextual Info: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

TB334

Contextual Info: Guidelines for Soldering Surface Mount Components to PC Boards Technical Brief September 1995 TB334 Author: Maury Rosenfield The most commonly used techniques for mounting SMDs Surface Mounted Devices to PC boards are Infrared (IR) and Vapor Phase (VP) reflow. IR and VP reflow are preferred over

TB334

Abstract: Guidelines for Soldering Surface Mount Components to PC Boards J-STD-020A TB363
Contextual Info: Guidelines for Soldering Surface Mount Components to PC Boards TM Technical Brief October 2000 TB334.2 Author: Maury Rosenfield Introduction glass transition temperature of the epoxy in FR-4 boards should be avoided. Depending on the type of IR or VP equipment, the temperature of the component and the PC

TB334

Contextual Info: TECH BRIEF Harris Semiconductor No. TB334 September 1995 Guidelines for Soldering Surface Mount Components to PC Boards Author: Maury Rosenfield The most commonly used techniques for mounting SMDs Surface Mounted Devices to PC boards are Infrared (IR) and

regulator 4468

Abstract: HP4410DY HP4410DYT TB334
Contextual Info: HP4410DY Data Sheet August 1999 10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 10A, 30V • rDS ON = 0.0135Ω at ID = 10A, VGS = 10V • rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount

J-STD-020A

Abstract: TB334
Contextual Info: Application Note 7528 April 2002 TB334 Guidelines for Soldering Surface Mount Components to PC Boards 1. Introduction Special care must be taken when soldering surface mount components to a printed circuit (PC) board. There are 4 commonly used techniques for soldering surface mount components

d8p05

Abstract: RFP8P05 RFD8P05 RFD8P05SM RFD8P05SM9A TB334 23842
Contextual Info: RFD8P05, RFD8P05SM, RFP8P05 Data Sheet July 1999 8A, 50V, 0.300 Ohm, P-Channel Power MOSFETs 2384.2 Features • 8A, 50V These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits,

HP4936DY

Abstract: HP4936DYT TB334
Contextual Info: HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: ISL9K1560G3 30 A, 600 V STEALTH Dual Diode Features Description • Stealth Recovery trr = 29.4 ns @ IF = 15 A The ISL9K1560G3 is a STEALTH™ dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family

Contextual Info: ISL9R460PF2 4 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9R460PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and

Contextual Info: ISL9K460P3 8 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9K460P3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse

IRF646

Abstract: TB334
Contextual Info: IRF646 Data Sheet January 2002 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET Features • 14A, 275V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

ifr120

Abstract: IFU120 IFr-120 IRFR120 IRFR120T IRFU120 TB334
Contextual Info: IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

75631P

Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE

7n10l

Abstract: 7n10le RFD7N10LESM AN7254 AN7260 RFD7N10LE RFD7N10LESM9A TB334
Contextual Info: RFD7N10LE, RFD7N10LESM Data Sheet Title FD7 0L, D7 0LS bt A, 0V, 00 m, an, gic vel, wer OSTs utho October 1999 7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs Features These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes

76639p

Abstract: HUF76639P3 HUF76639S3S HUF76639S3ST TB334 92e2
Contextual Info: HUF76639P3, HUF76639S3S Data Sheet November 1999 File Number 4694.3 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 39P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76639P3 HUF76639S3S D rpor on, A, 0V, 27 m, ann gic

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

2N6790

Abstract: TB334
Contextual Info: 2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching

Contextual Info: HPLR3103, HPLU3103 Semiconductor 52A, 30V, 0.019 Ohm, N-Channel Logic Level, Power MOSFETs May 1998 Features Description • Logic Level Gate Drive These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

RELAY 4088

Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using

AN9321

Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
Contextual Info: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve