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Rochester Electronics LLC HP4936DYT MOSFET 2N-CH 30V 5.8A 8SOIC
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DigiKey	HP4936DYT	Bulk	2,500		910	1 - 10 - 100 - 1000 $0.33 10000 $0.33	Buy Now
Harris Semiconductor HP4936DYT HP4936DYT
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Verical	HP4936DYT		2,500		1,140	1 - 10 - 100 - 1000 - 10000 $0.2934	Buy Now
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Rochester Electronics	HP4936DYT		2,500		1	1 - 10 - 100 $0.3171 1000 $0.2632 10000 $0.2347	Buy Now

HP4936DYT Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
HP4936DYT		Fairchild Semiconductor	5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET		Original	PDF	154.01KB	6
HP4936DYT		Intersil	MOSFET, Enhancement, N Channel, 30V, 8-Pin		Original	PDF	86.31KB	5

HP4936DYT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HP4936DY Abstract: HP4936DYT TB334 Contextual Info: HP4936DY Data Sheet December 2001 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HP4936DY HP4936DY HP4936DYT TB334	PDF
Contextual Info: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount	Original	HP4936DY	PDF
4469 mosfet Abstract: HP4936DY HP4936DYT TB334 Contextual Info: HP4936DY Data Sheet August 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET • Logic Level Gate Drive • 5.8A, 30V • rDS ON = 0.037Ω at ID = 5.8A, VGS = 10V • rDS(ON) = 0.055Ω at ID = 4.7A, VGS = 4.5V • Related Literature - TB334, “Guidelines for Soldering Surface Mount	Original	HP4936DY TB334, 4469 mosfet HP4936DY HP4936DYT TB334	PDF
Contextual Info: HP4936DY Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HP4936DY HP4936DY MS-012AA 330mm EIA-481	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
Contextual Info: H A R R IS X HP4936DY Semiconductor 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET May 1998 Features Description • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the	OCR Scan	HP4936DY MS-012AA	PDF
Contextual Info: interrii HP4936DY D ata S hee t A u g u st 1999 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET F ile N u m b e r Features • Logic Level Gate Drive This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the	OCR Scan	HP4936DY HP4936DY	PDF