TN2905A Search Results

TN2905A

Abstract: PN2907A
Contextual Info: TN2905A Discrete P O W E R & S ig n a l Technologies National Semiconductor"' TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s a g e n e ra l purp o se am p lifie r a n d sw itch requiring colle cto r c u rren ts to 5 0 0 m A , S o u rc e d from

TN2905A

Abstract: PN2907A
Contextual Info: N TN2905A C TO-226 BE PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol

TN2905A

Abstract: PN2907A
Contextual Info: TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d for u s e a s a g e n e ra l p u rp o s e a m p lifier a n d sw itch req uirin g c o llec to r c u rre n ts to 5 0 0 m A . S o u rc e d from P ro c e s s 6 3 . S e e P N 2 9 0 7 A for c h a ra c te ristics .

TN2905A

Contextual Info: TN2905A Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r ~ TN2905A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. S ee P N 29 0 7 A for characteristics.

TN2907A

Contextual Info: TN2905A TN2905A TN2907A C B TO-226 E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

TN2905A

Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905
Contextual Info: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*

Contextual Info: TN2905A PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum RdtiflQS TA = 25°C unless otherwise noted

Contextual Info: I LSQ1130 PNP General Purpose Amplifiers and Switches V 0040472 Device No. PN3638 Ob? PN3638A PN3644 PN3645 PN4143 TIS93 TN2905A Case Style TO-92 92 TO-92 (92) TO-92 (92) TO-92 (92) TO-92 (92) CB O V CEO V EB O (V) Min (V) Min (V) Min 25 25 4 25 45 60 60

TN2905A

Contextual Info: S e m i c o n d u c t o r 11 TN2905A PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as a g e n e ra l p u rp o se a m p lifie r a n d sw itc h re q u irin g c o lle c to r c u rre n ts to 5 0 0 m A. S o u rc e d fro m P ro c e s s 63. S ee P N 2 9 0 7 A fo r c h a ra c te ris tics.

TN2905A

Abstract: PN3638 PN3638A PN3644 PN3645 PN4143 TIS93
Contextual Info: This I Material u~ Ln □ fc-1 t-1 ÜJ □ □ PNP General Purpose Amplifiers and Switches V Device No. Case Style Copyrighted □ j: □ PN3638 jr TO-92 92 CBO V CEO V 1 'c e s EBO (V) Min (V) Min (V) Min 25 25 4 * V V CE(SAT) 'C B 0 @ V CB PN3638A TO-92

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

MPSD05

Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSD55 MSB492 PN2221 PN2221A PN2906
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY MPSA05 MPSA06 MPSA55 MPSA56 MPSD05 N N P P N MAXIMUM RATINGS CASE TO-92A TO-92A TO-92A TO-92A TO-92A Pd IC VCEO mW (A) (V) 625 625 625 625 350 0.5 0.5 0.5 0.5 0.5 60 80 60 80 25 HFE min 50 50 50 50

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

G25CW

Abstract: CIL10
Contextual Info: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

D43C8

Contextual Info: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Contextual Info: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60