TP0620 Search Results

TP0620

Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input

Contextual Info: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TP0620

Abstract: sitp
Contextual Info: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TP0620

Abstract: TP0620N3
Contextual Info: TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package -200V 12Ω -0.75A -2.4V TP0620N3 TO-92 MIL visual screening available 7 Features Low Threshold DMOS Technology

Contextual Info: TP0616 TP0620 S u p ertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B^DGS max JÎ -160V 12£2 -200V 120 BV d ss / R d S(ON) Order Number / Package V GS(th) (max) TO-92 -0.75A -2.4V TP0616N3 TO-220 — -0.75A -2.4V

TP0620N5

Abstract: p-channel 200V TP0616N2 TP0620N2 p-channel DMOS P-CHANNEL TO-220 TO-220 TP0616 TP0616N3 TP0616N5
Contextual Info: TP0616 TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) -160V 12Ω -0.75A -2.4V TP0616N2 TP0616N3 TP0616N5 TP0616ND -200V 12Ω -0.75A

TP0616N3

Abstract: TP0616 TP0620 TP0620N3 TP0620N5 02A16
Contextual Info: TP0616 TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) -160V 12Ω -0.75A -200V 12Ω -0.75A Order Number / Package TO-92 TO-220 -2.4V TP0616N3 — -2.4V TP0620N3

B062311

Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input

TP0616N3

Contextual Info: TP0616 TP0620 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV dss / ^DS ON ^D(ON) ^GS(th) b v dgs (max) (min) (max) -160V 12Q -0.75A -2.4V TP0616N2 TP0616N3 TP0616N5 TP0616ND -200V 12Q -0.75A -2.4V TP0620N2 TP0620N3

TP0620

Contextual Info: Supertex inc. TP0620 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness mils Back Side Metal 45 45 11 ± 1.5 Au (mils) TP0620 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TP0620

Abstract: TP0620N3
Contextual Info: TP0620 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package -200V 12Ω -0.75A -2.4V TP0620N3 TO-92 MIL visual screening available Features Low Threshold DMOS Technology

TP0620

Contextual Info: TP0620 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness mils Back Side Metal 45 45 11 ± 1.5 Au (mils) TP0620 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold -2.4V max. High input impedance Low input capacitance (85pF typical) Fast switching speeds Low on-resistance

Contextual Info: TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (85pF typ.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

Contextual Info: TP0620 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss / R d S ON I d (ON) ^GS(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92 -200V 12& -0.75A -2.4V TP0620N3 t M IL visual screening available

Contextual Info: S u p e r t e x in c TP0616 TP0620 Low Threshold . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R DS ON b v tcs (max) -160V 120 -0.75A -2.4V TP0616N 2 T P 0616N 3 T P 0616N 5 T P0616N D -200V 12£i -0.75A -2.4V

TP0616N3

Abstract: TP0616N2
Contextual Info: ^ Supertex inc. TP06C Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices O rder Num ber / Package R dS ON (max) ' d (ON) ^G S fth ) BV dgs (min) (m ax) TO-39 TO-92 -160V 1212 -0.75A -2.4V TP0616N2

Contextual Info: ^ . T P 06C Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t Order Number / Package BV DSS/ ^ D S O N ' d (ON) ^ G S (lh ) b v dgs (max) (min) (max) -160V 12Q -0.75A -2.4A TP0616N2

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.

logic pulser specifications

Abstract: VP1306N3 logic pulser
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.

TN0102N3

Abstract: VN1304N3 logic pulser specifications VP1304N3 TN0620N3 TP0102N3 TP0620N3
Contextual Info: VN/VP13 Series Application Note AN–D8 High Voltage Pulser Circuits Introduction Circuit Description/Design Considerations The high voltage pulser circuit shown in Figure 1 utilizes Supertex complementary N- and P-channel DMOS transistors to achieve excellent performance and efficiency with minimal components.