VF25 Search Results

IS64LF12832A-7

Abstract: is64lf12832a LF12836A E0108 IS61LF12836A-6.5B3
Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOWTHROUGH SRAM JUNE 2012 PRELIMINARY INFORMATION DESCRIPTION FEATURES • Internal self-timed write cycle

84 pin PBGA

Abstract: IS64LF12836A-7
Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM SEPTEBMER 2010 FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM APRIL 2014 FEATURES DESCRIPTION • Internal self-timed write cycle  Individual Byte Write Control and Global Write

Contextual Info: ISSI IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LF12832A

Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEBRUARY 2014 FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOWTHROUGH SRAM JUNE 2012 DESCRIPTION FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

VF25

Abstract: eutectic
Contextual Info: VF25 VF35 Die Specifications VF25 / VF35 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF25/VF35 45 45 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5

varo vf25-25x

Abstract: VF25-30X varo vf25-10x varo vf10 VF25-25 VF25-25X VF5-20X VARO VARO VF 15X VF5-15
Contextual Info: HIGH VOLTAGE DIFFUSED SILICON POWER RECTIFIERS VARO ty p e No. Average Forward Current« < T a = 4 0 °C , lo Peak Repetitive Reverse veltage, M ax. Inst. Forward Voltage Drop @ T a = 25°C and lo V fm Volts Case Style VF5- 5 VF10- 5 VF25- 5 5,000 12 A

Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A ISSI 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

VF250A1

Abstract: VF250
Contextual Info: m MATEC CORP/ VALPEY-FISHER bME V 5flfc.lG24 QQ0Q32Ô 521 IVPC OSCILLATORS V F250 Series Dual Output TTL Hybrid C rystal Clock O scillators Valpey-Fisher’s VF250 series of full-size TTL oscillators designate a family of oscillators with two outputs from one

7.5B3

Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A ISSI 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS61LF12832A

Abstract: 14x22mm
Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM SEPTEBMER 2011 FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

IS64LF12832A-7

Abstract: 75B21 7.5B2 IS64LF25618A lf12836
Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

VF315P

Abstract: VF150C
Contextual Info: MATEC CORP/ VALPEY-FISHER fc>4E D SßblDSM GGG033G 1ST H V P C OSCILLATORS VF150G Series, VF75G Series, VF250G Series, and VF150-CG Series Gull Wing TTL Hybrid C rystal Clock O scillators Recom m ended Solder Pad Layout T m Î Valpey-Fisher offers all the features of

Contextual Info: ISSI IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: IS61 64 LF12832A IS64VF12832A IS61(64)LF12836A IS61(64)VF12836A IS61(64)LF25618A IS61(64)VF25618A 128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM SEPTEBMER 2011 FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM DECEMBER 2012 FEATURES DESCRIPTION • Internal self-timed write cycle  Individual Byte Write Control and Global Write

IS61LF12832EC

Contextual Info: 128K x36/32 and 256K x18 4Mb, ECC, SYNCHRONOUS FLOW-THROUGH SRAM DECEMBER 2012 FEATURES DESCRIPTION • Internal self-timed write cycle  Individual Byte Write Control and Global Write

VF25

Contextual Info: VF25 Die Specifications VF25 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF25 45 45 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 6.4 x 6.6

SW7 357

Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Contextual Info: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46

TP0620

Abstract: TP2520ND VF25 6 PIN case mos fet p-channel sitp0
Contextual Info: Supertex inc. TP0620 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input

IGCT thyristor ABB

Abstract: igct abb IGCT 3300V A115 B115 HFBR-1528 HFBR-2528 MTA-156 VT115 IGCT thyristor current max
Contextual Info: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 5500 520 3.5x103 2.3 2.3 3300 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 06F6010 PRELIMINARY Doc. No. 5SYA1222-05 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and

n5 sot-89

Abstract: CH06F
Contextual Info: CH06F VGS off IDSS SOT-23 K1 TO-92 N3 TO-220 N5 SOT-89 N8 Device Number BVDSX min (V) RDS(ON) max (Ω) min (V) max (V) min (mA) DN3525 250 6.0 -1.5 -3.5 300.0 VF35 DN3125 250 20 -1.5 -3.5 200.0 VF31 DN25301 300 12 -1.0 -3.5 200.0 DN3535 350 10 -1.5 -3.5