UF840 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

UHVP806

Abstract: PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10
Contextual Info: Micmsemj Ultra Fast Rectifiers UFR Part Number UES1404 UHVP802 UF830 RSF0840 UHVP804 UF840 UF850 RSF0860 UHVP806 UF860 UF870 UF880 1N5812 1N5813 1N6657 1N6657R 1N5815 1N66S8 1N6658R 1N6659 1N6659R 1N6079 1N6080 UFT121Q 1N6081 UFT1215 UFT1220 UFT1230 UFT1240

specifications of power mosfet

Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

UF840

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

DFN16

Contextual Info: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz

MOSFET 50V 100A TO-220

Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UF8401MN 8 Line ESD/EMI Protection P b Lead Pb -Free 16 FEATURES: 1 • EMI/RFI Filter with Integrated TVS for ESD Protection ■ ESD Protection to IEC 61000-4-2 (ESD) Level 4, ±15kV (air), ±8kV (contact) ■ Integration of 40 Discrete Components ■ Filter Performance: 25dB Minimum Attenuation: 800MHz to 2.5GHz

f830

Abstract: UF830 UF840 UF850 uf85
Contextual Info: Ultra Fast FRecovery Rectifiers UF830 U r 850 -C Dim. Inches Minimum -B A B C D E F G H J K L M N P Base Cathode J. •Ji .390 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .080 .028 .045 M illim eter Maximum Minimum .415 .055 .190 .260 .650 .155 .120

UF850

Abstract: UF830 UF840 316-0O
Contextual Info: Ultra Fast Recovery Rectifiers UF830 —C UF850 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J . dt .3 90 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155

ESDA6V8

Abstract: WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode ESDA14V2 ESDA25 WOSD12
Contextual Info: W EITRON TECH NO LOG Y TVS I ESD Protection Diode PPK C Ir 8 /2 0 ms (pF) @V rwm (W) Typ (MA) 300 20 220 20 190 5.0 13.3 150 4.0 5.0 600 1.0 20 WOSTOSC 5.0 6.1 WOSTO8C 8.0 8.5 WOST12C 12.0 WOST15C 15.0 ESDA5V3 V rwm V br (V) (V) WOST04 4.0 5.0 WOSTOS 5.0

Contextual Info: UF810-UF880 Ultra Fast Rectifiers VOLTAGE RANGE: 100 - 800 V CURRENT: 8.0A TO - 220AC 2.8± 0.1 Features Metal-Semiconductor junction with guard ring 4.5± 0.2 10.2± 0.2 1.4± 0.2 Epitaxial construction φ 3.8± 0.15 xxx 19.0± 0.5 High surge capability