Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UF830 Search Results

    SF Impression Pixel

    UF830 Price and Stock

    Cree, Inc. JE2835AWT-00-0000-000A0UF830E

    LED J WARM WHT 3000K SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () JE2835AWT-00-0000-000A0UF830E Cut Tape 4,928 1
    • 1 $0.1
    • 10 $0.036
    • 100 $0.031
    • 1000 $0.02669
    • 10000 $0.02551
    		Buy Now
    JE2835AWT-00-0000-000A0UF830E Digi-Reel 4,928 1
    • 1 $0.1
    • 10 $0.036
    • 100 $0.031
    • 1000 $0.02669
    • 10000 $0.02551
    		Buy Now
    JE2835AWT-00-0000-000A0UF830E Reel 4,000 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.02438
    		Buy Now
    Bristol Electronics JE2835AWT-00-0000-000A0UF830E 20,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Maritex JE2835AWT-00-0000-000A0UF830E 1,235 4,000
    • 1 $0.1
    • 10 $0.1
    • 100 $0.092
    • 1000 $0.085
    • 10000 $0.077
    		Buy Now

    Cree, Inc. JE2835AWT-00-0000-0K0A0UF830E

    - Tape and Reel (Alt: JE2835AWT-00-0000-0K0A0UF830E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas JE2835AWT-00-0000-0K0A0UF830E Reel 111 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    UF830 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    UF830
    		Microsemi Ultrafast Recovery Rectifiers Scan PDF 123.61KB 2
    UF830
    		Microsemi Ultra Fast Recovery Rectifier Scan PDF 123.61KB 2

    UF830 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and


    Original     		UF830Z O-220F UF830ZL-TF3-T UF830ZG-TF3-T O-220F QW-R502-612 PDF

    f830

    Abstract: UF830 UF840 UF850 uf85
    Contextual Info: Ultra Fast FRecovery Rectifiers UF830 U r 850 -C Dim. Inches Minimum -B A B C D E F G H J K L M N P Base Cathode J. •Ji .390 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .080 .028 .045 M illim eter Maximum Minimum .415 .055 .190 .260 .650 .155 .120


    OCR Scan     		UF830 UF850 T0-220AC UF840 UF850 30nce f830 uf85 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830-F Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF830-F UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220F QW-R502-A94 PDF

    UHVP806

    Abstract: PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10
    Contextual Info: Micmsemj Ultra Fast Rectifiers UFR Part Number UES1404 UHVP802 UF830 RSF0840 UHVP804 UF840 UF850 RSF0860 UHVP806 UF860 UF870 UF880 1N5812 1N5813 1N6657 1N6657R 1N5815 1N66S8 1N6658R 1N6659 1N6659R 1N6079 1N6080 UFT121Q 1N6081 UFT1215 UFT1220 UFT1230 UFT1240


    OCR Scan     		-220AC O-220 O-254 UHVP806 PHILIPS+23967 21159 TO-254 23967 RSF0840 UFR-10 PDF

    uf830l

    Abstract: UF830G UF830
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay


    Original     		UF830 O-220 O-220F O-262 O-263 O-251 O-252 UF830L-TAt QW-R502-046 uf830l UF830G UF830 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830 O-220 UF830L UF830-TA3-T UF830es QW-R502-046 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF830 O-220 O-220F UF830L UF830-TA3-T UF830L-TA3-Tat QW-R502-046 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830 UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220F UF830L-TF1-T QW-R502-046 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830Z Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching


    Original     		UF830Z UF830ZL-TF3-T UF830ZG-TF3-T QW-R502-612 PDF

    UF850

    Abstract: UF830 UF840 316-0O
    Contextual Info: Ultra Fast Recovery Rectifiers UF830 —C UF850 Dim. Inches Minimum —B A B C D E F G H J K L M N P Base Cathode J . dt .3 90 .045 .180 .245 .550 .139 .100 -.500 .190 .014 .0 80 .028 .0 45 M illim eter Maximum Minimum .415 .0 55 .190 .2 60 .650 .155


    OCR Scan     		UF830 UF850 T0-220AC UF840 UF850 316-0O PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830 O-220 O-220F1 O-220F2 O-252 O-251 O-262 O-220F O-263 QW-R502-046 PDF

    S1-M10

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay


    Original     		UF830 O-220 O-220F O-220F1 O-262 O-263 O-251 O-252 QW-R502-046 S1-M10 PDF

    uf830l

    Abstract: RGS12 UF830 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET 400V TO-220 mosfet TEST UF830L-TN3-R uf830l-ta3-t RGS-12 N-Channel mosfet 400v to220
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF830 UF830L UF830-TA3-T UF830L-TA3-T UF830-TF3-T UF830L-TF3-T QW-R502-046 uf830l RGS12 UF830 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET 400V TO-220 mosfet TEST UF830L-TN3-R uf830l-ta3-t RGS-12 N-Channel mosfet 400v to220 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830-E Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830-E O-220 UF830L-TA3-T UF830G-TA3-T QW-R502-993 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		UF830 O-220 O-220F O-220F1 O-263 O-220F2 O-262 O-251 O-252 UF830L-Tat PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830-F Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF830-F UF830L-TA3-T UF830G-TA3-T O-220 UF830L-TF3-T UF830G-TF3-T O-220at QW-R502-A94 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		UF830K O-220F O-220 O-220F2 O-252 UF830KL-TA3-T QW-R502-A77 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830K-MT Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators,


    Original     		UF830K-MT UF830K-MT UF830KL-TA3-T UF830KG-TA3-T UF830KL-TF3-T UF830KG-TF3-T QW-R209-030 PDF

    Contextual Info: UF810-UF880 Ultra Fast Rectifiers VOLTAGE RANGE: 100 - 800 V CURRENT: 8.0A TO - 220AC 2.8± 0.1 Features Metal-Semiconductor junction with guard ring 4.5± 0.2 10.2± 0.2 1.4± 0.2 Epitaxial construction φ 3.8± 0.15 xxx 19.0± 0.5 High surge capability


    Original     		UF810-UF880 220AC O--220AC UF810 UF820 UF830 UF840 UF860 UF880 PDF