UNR221N Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121N Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR221N x 2 Parameter

UN1119

Abstract: UN221N UNR1119 UNR221N XP04286
Contextual Info: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1

UNR221N

Abstract: XP0121N
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121N Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR221N x 2 Parameter

UNR221N

Abstract: XP0121N
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0121N Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR221N x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)

UN221N

Abstract: UNR221N XP0121N
Contextual Info: Composite Transistors XP0121N Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR221N UN221N x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element

Panasonic Main Unit VB -5150

Abstract: UNR211N UNR221N UP0431N
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage (Emitter open)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04286 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package

IC3001

Abstract: UP0431N UNR211N UNR221N
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 • Features ■ Basic Part Number 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)

Contextual Info: Composite Transistors XN0421N XN421N Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04286 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421NG Silicon NPN epitaxial planar type For switching For digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03391 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) For digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package

UP0431N

Abstract: UN211N UN221N UNR211N UNR221N
Contextual Info: Composite Transistors UP0431N Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 4 • Features ■ Basic Part Number of Element 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package

UNR211N

Abstract: UNR221N XP0431N
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0431N Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) M Di ain sc te on na tin nc ue e/ d For digital circuits • Features ue pl d in an c

UNR2119

Abstract: UNR221N XP04286
Contextual Info: Composite Transistors XP04286 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR221N

Abstract: XP0121N
Contextual Info: Composite Transistors XP0121N Silicon NPN epitaxial planar type 0.425 For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR211N

Abstract: UNR221N XP0431N
Contextual Info: Composite Transistors XP0431N Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR2116

Abstract: UNR221N XP03391
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP03391 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm (0.425) 0.20±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 Th an W is k y

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455