UNR2212 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01212 Silicon NPN epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR2212 x 2 Parameter

XP01212

Abstract: UNR2212
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01212 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2212 x 2 Parameter

ft 103

Abstract: LD-5461BS 1414C BTA136 D1555 TLP434A UN2112 UN2212 UNR2112 UNR2212
Contextual Info: Composite Transistors XN04312 XN4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 • Basic Part Number 0.50+0.10 –0.05 • UNR2212 (UN2212) + UNR2112 (UN2112)

UNR2212

Abstract: XP01212
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01212 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • UNR2212 x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)

UNR2212

Abstract: XP06212
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06212 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR2212 x 2 Parameter

UNR2212

Abstract: UP04212
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04212 Silicon NPN epitaxial planar type For digital circuits 4 M Di ain sc te on na tin nc ue e/ d 5° (0.20)  UNR2212 x 2 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 ue

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

UN2112

Abstract: UN2212 UNR2112 UNR2212 XN0A312 XN1A312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0A312 (XN1A312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 2 1 (0.65) 0.30+0.10

XN04312

Abstract: UN2112 UN2212 UNR2112 UNR2212 XN4312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 4 M Di ain sc te on na tin nc ue e/ d • Features ■ Basic Part Number Rating Unit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04312 (XN4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

UN2112

Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04312 (XP4312) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package

IC DATE CODE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01212 Silicon NPN epitaxial planar type For digital circuits • Package ■ Features • Two elements incorporated into one package (Transistors with built-in resistor)

UNR2112

Abstract: UNR2212 UP04312
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For switching/digital circuits M Di ain sc te on na tin nc ue e/ d Collector-base voltage

UN2212

Abstract: UNR2212 XN01212 XN1212
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01212 (XN1212) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10 –0.05

UN2112

Abstract: UN2212 UNR2112 UNR2212 XP04312 XP4312
Contextual Info: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor)

UNR2212

Abstract: XP04212
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04212 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou

UNR2212

Abstract: XN01212G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01212G Silicon NPN epitaxial planar type For switching/digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

UN2212

Abstract: UNR2212 XN04212 XN4212
Contextual Info: Composite Transistors XN04212 XN4212 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package

UNR2210

Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and