V01TAGE Search Results

f7555

Abstract: 4062A 4072A 4063a 1N408 zener 2w 1n 4074a 40B1A
Contextual Info: 1N4057 thru 1N4085A Microsemi Corp. ' The âtoôe experts SANTA ANA, CA SCOTTSDALE, AZ 1 For more information call: 602 941-6300 FEATURES HIQH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES • ZENER V01TAGE 12.4V to 200V . TEMPERATURE COEFFICIENT RANGE: 0 .0 0 5 % /°C to 0.002% / ° C

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S M L - L X 1 5 I Y C —TR RÛ.35 ERO.014] 3 P L S . P O L A R IT Y MARK 3.00 [0.118] 3 RED YELLOW 1 2 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25T PARAMETER o I1 ! _ 0,40 [0,016] MAX UNITS 635 (RED) 3 ZD/2.1 REVERSE V01TAGE

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

Scans-006076

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SML—LX15AGC-TR RÛ.35 [R0.014] 3 PLS. POLARITY MARK 3.00 [ 0 .118] 3 AMBER GREEN 1 2 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25T PARAMETER o 2.00 [ 0 ,0 7 9 ] I1 !_ MIN PEAK WAVE1ENGTH MAX UNITS 605 (AMBER) FORWARD VOLTAGE (A/G)

ECG823

Abstract: k5001 ECG923 K5-001 philips SQ 10 amplifier AM radio
Contextual Info: PHILIPS E C G INC 1 7 E D bbS3i2a • % -1 1 T-74-Q5-01 i ECG823 Sem iconductors •’i • 3 J A U D IO i| P O W E R A M P L IF IE R 1 features *■ : ■ Battery operation -s 4 • Minimum external parts 1 Wide supply voltage range Lo w quiescent current drain

2n3749

Abstract: 2N3744 2N3751 2N3747 2N3750 2N3748 2N3752 Pirgo Electronics 2N3759
Contextual Info: #*"*-: A P I ELECTRONICS INC ^3 |p a ? % D E | G D 4 3 S c]a □DD0Q44 1 r-3 3 ^ THRU 2N3752 POWER TRANSISTORS ENGINEERING BULLETIN pgggg"*r ,".r.^!.lM^'*"7 'T tV ^ y « ^ 2N 3744^ TYPE 2N3744 THRU 2N3752, 5 MâP NPN SILICON PLANAR POWER TRANSISTORS SEATING P L A N E -

"multiple aperture Window Discriminator"

Abstract: MA101A multiple aperture window discriminator MA301A HA201 HA-201 A201A IA101A "Fairchild linear" ixa201
Contextual Info: LiAlOlA • iA201A • jjA301A GENERAL PURPOSE OPERATIONAL AMPLIFIERS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESCR IPTIO N — The 101 A, 201A and 301A are General Purpose monolithic Operational Amplifiers constructed using the Fairchild Planar* epitaxial process. These integrated circuits are

rt 7257

Contextual Info: 19-1071; RevO; 6/96 V M y J X U M +2.7V to +5.25Vf Low-Power, 4-Channel, Serial 12-Bit ADC in QSOP-16 Features ♦ 4-Channel Single-Ended or 2-Channel Differential Inputs ♦ Single +2.7V to +5.25V Operation ♦ Low Power: 0.9mA 133ksps, 3V supply 10pA (1ksps, 3V supply)

30D0

Abstract: 550D C175
Contextual Info: SC:1 UNCONTROLLED DOCUMENT 48.00 CL, 890] 9,00 [0,354] SQR, I— 4,60 [0,181] LD M -1 924788NI PRELIMINARY IN P /N DIR REV. 6.00 [0.236] a PLS.5 04.80 [00,189] 64 P L S . PIN 17 PIN 3Ê - PART NUMBER ELECTRO-OPTICAL CHARACTERISTICS T A = 2 5 T PARAMETER

Contextual Info: UNCONTROLLED DOCUMENT PIN 18 PIN 10 REV, A 4.50 ±0.75 10,50 [0,413] [0.177+0.030] PART NUMBER REV. L D D -A A 1 03RI A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11149. lf=10mA E1[CTR0-0PTICAL CHARACTERISTICS Ta = 2 5 X MIN PARAMETER Vf 5.0 REVERSE VOLTAGE

MTP10N06E

Abstract: 221A-04 72SM AN569 MTM10N06E evod
Contextual Info: IM E D I MOTOROLA SC X ST R S /R F MOTOROLA • I b3t,72SM 00^0033 T | 7 3 3 7 - a SEMICONDUCTOR TECHNICAL DATA MTM10N06E MTP10N06E Designer's Data Sheet TM OS IV Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate T M O S PO W ER F ET s

V01TAGE

Contextual Info: UNCONTROLLED DOCUMENT REV, 6.15 EÛ.242] A B L PART NUMBER REV. S S L — LX4673GSRWLA20 B E.C.N. NUMBER AND REVISION COMMENTS DATE UPDATED SPECS. 12.2.94 7.10.01 E.C.N. #10BRDR. & REDRAWN IN 3D. 3.65 [Û.144] } ELECTRO-OPTICAL CHARACTERISTICS Ta = 25‘ C

Contextual Info: UNCONTROLLED DOCUMENT REV, A PART NUMBER REV. SSL—LX25730D A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10BRDR. & DATE 6.15.01 REDRAWN IN 3D. 5,00 [ 0 ,197 ] 2.00 [0 .0 7 9 ] J lf=2DmA ELECTRO-OPTICAL CHARACTERISTICS Ta =25'C PARAMETER MIN PtAK WAVtlENGTH

qaf 212

Abstract: WFA225K
Contextual Info: T H I R DA N G L EP R O J E C T I O N I ALTERATION I SS U E ITEM CODE ECWF2Wl04JAB 1 2W124JAB 1 1 2W154JAB 1 2W184JAB 1 2W224JAB 1 2W274JAB H 2W334JAB 1 2W394JAB 1 1 2W474JAB 1 2W564JAB 1 1 2W684JAB 1 2W824JAB 1 2Wl05JAB H 2W125JAB 2W155JAB 1 2W185JAB 1 2W225JAB

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

gd4066

Abstract: GD4066B gd406 4066BC
Contextual Info: CD4066BM/CD4066BC 2 National Semiconductor CD4066BM/CD4066BC Quad Bilateral Switch General Description The CD4066BM/CD4066BC is a quad bilateral switch in­ tended for the transmission or multiplexing of analog or digi­ tal signals. It is pin-for-pin compatible with CD4016BM/

Contextual Info: T HI R D川 L EP R O J E C T I O N， ALTERATION I S S U E I … -nhu 一H 一H 一M - H - H - H 一H - H 一一一-一一一- -ra- H 一H - H -一 nu-・ ， d - 一 一H - H - - - H 一H - H tt一 一一一- 一-一一 DATE Apr . 1 2008 A pr . 1 2012 Apr

Contextual Info: iHIRD A N G L E PROJECTION I ALTERATION I S S U E RATED ITEM CODE VOLTAGE ECQE1Al03 FZ 125VAC / / 1 lAI23()FZ ! I /11A1530FZ ! I lA1830FZ ! I ! I lA223 0 FZ ! I / 1 lA273 0 FZ ! I ! l lA3330FZ 1 1 ! I lA393 0 FZ ! I ! I lA473 ( ) FZ ! I lA5630FZ ! I !

schematic diagram AC to DC 120v to 19.5v

Abstract: small signal transistor philips manual 24v AUDIO transistor AMPLIFIER CIRCUIT DIAGRAM SSB transmitter ECG370 ECG370A automatic audio switch circuit schematic preamplifier AGC remote audio automatic gain control 24v cc stabilized
Contextual Info: bt S BTS ñ Ü003227 S ECG370A 3S r AGC/SQUELCH AMPLIFIER . semiconductor PHILIPS "T 1 7 7 - G S - O S 17Ë D E C G INC ECG370 is a dire ct coupled m o n o lith ic am pli­ fier whose voltage gain is con trolled b y an external DC voltage. The device features:

MC3106

Abstract: rasistor MC3006 MC3106F MC3006F MC3006L MC3106L
Contextual Info: f~ m \P L E 3 -in p u t - a n d " g a t e ^ _ M T T L III MC3100/3000 s e r ie s MC3106F • MC3006F MC3106L • MC3006L,P S4H11J (74H11J.N) This device consists of three 3*input A N D gates. This non-inverting function is useful for optimizing

MC100I

Abstract: independent termination "50 Ohm" MC1001 MC1003 mc1203 2sc 1203
Contextual Info: 6-i n p u t cates ì M EC L II M C 1 0 0 0 / 1 2 0 0 s e r i e s MC1001 thru M C I003 MC1201 thru M C I203 Provide sim ultaneous O fV N O R or A N D /N A N D o u tp ut fun ction s. These devices co ntain an internal bias reference insuring th at the threshold point is alw ays in the cen ter o f the tran sition region over

MC424

Abstract: MC524 MC574 mc400 mc474 MC600 MC674 kd28
Contextual Info: d u a l j- K f l i p - f l o p C O M M O N C L O C K \ M T T L I MC500/400 series • MC524 . MC574 MC424 • MC474 m emory when the clock goes to the high state. When the clock returns low, the information is transferred to the bi­ stable section and the Q and 3 outputs. The information on

MC789P

Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series

MFE211

Abstract: mfe212 3la5
Contextual Info: M O T Q R C L A SC XSTRS/R F 1 5 E 0 | b3 b 7 2 5 4 QQfiL73fi t I N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS MFE211 r-3i-Ä£r ' MFE212 . . . high Y fs depletion m ode dual gate transistors designed for VHF am plifier and m ixer applications.