VN0606L Search Results

VN66AFD

Abstract: vn66a
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v

vn0606m

Abstract: b0808
Contextual Info: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V

gs 1117 ax

Abstract: VN66 TN0610L VN0606M
Contextual Info: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33

VN0606

Abstract: VN0606L
Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VN0606L

Abstract: VN66AFD TN0601L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

52426

Contextual Info: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M

VN66AFD

Abstract: TN0601L VN0606L VN0606M
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

vn66afd

Abstract: 0606L TN0601L VN0606L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

Contextual Info: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 3 .0 ÌÌ 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology □ Free from secondary breakdown

N-Channel Enhancement-Mode Vertical DMOS FETs

Contextual Info: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs / BVd0S BVqss R dS ON (max) 60V 3 .o n If Ordering Information Order Number / Package TO-92 VN0606L 1.5A Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: VN0606 VN0610 fàkSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ If Ordering Information Order Number / Package b v tcs RdS ON (max) 60V 3n 1.5A VN0606L 60V 5£2 0.75A VN0610LL TO-92 Features Advanced DMOS Technology C These enhancement-mode (normally-off) transistors utilize a

VN66AFD

Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

TO-237

Abstract: VN0606L VN66AFD VN0606M TN0601L
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

7020.1

Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V

N0610

Contextual Info: V N 0606 V N 0610 LJàSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B VDSS/ R d s <o n *D O N ) b v dgs (max) (min) 60V 3£i 60V Order Number / Package TO-92 1.5A VN0606L 0.75A VN0610LL Features Advanced DMOS Technology

mosfet vn66afd

Contextual Info: T em ic TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) rDS(on) M a x (Q ) VGS(U.)(V) Id (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ V q s = 10 V 0.8 to 2 0.33 VN0606M 3@ VGS = 10V

VN0606

Abstract: p-channel DMOS VN0606L VN0610LL vn0606A
Contextual Info: VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3Ω 1.5A VN0606L 60V 5Ω 0.75A VN0610LL TO-92 Features Advanced DMOS Technology • Free from secondary breakdown

VN66AFD

Abstract: VN0606M TN0601L VN0606L TN0610L
Contextual Info: TN0601L, VN0606L/M, VN66AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L 60 VN0606M VN66AFD rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33

VN66AFD

Abstract: TN0601L VN0606L VN0606M
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

VN0606

Abstract: VN0606L "Bipolar Transistors"
Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

A12150

Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is