VN0606 Search Results

VN66AFD

Abstract: vn66a
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS<on) Max (&) VGS(th) (V) I d (A) 1.8 e v Gs = io v 0.5 to 2 0.47 0.8 to 2 0.33 0.8 to 2.5 1.46 TN0601L VN0606L 3e 60 VN66AFD v as = io v

vn0606m

Abstract: b0808
Contextual Info: T e m ic siiiconix TN0601L, VN0606L/M, VN66AFI N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number TN0601L VN0606L VN0606M VN66AFD r DS on) 3@ VGS = 10 V 3@ VGS = 10 V 3@ VGS = 10 V 60 Features • • • • • Max (Q) 1.8 @ VGs = 10 V

gs 1117 ax

Abstract: VN66 TN0610L VN0606M
Contextual Info: Tem ic snlconlx_ TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (Q) V c S (th ) (V ) I d (A) TN0601L 1.8 @ V os = 10 V 0.5 to 2 0.47 VN0606L 3 @ V gs = 10 V 0.8 to 2 0.33

A12150

Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

VN0606

Abstract: VN0606L
Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 3.0Ω 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

VN0606L

Abstract: VN66AFD TN0601L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

52426

Contextual Info: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M

VN0606

Contextual Info: Supertex inc. VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

VN0606M

Contextual Info: VN0606M B S ilic o n ix 60VMOSPOWER N-Channel Enhancement Mode This power FET is designed especially for low power high frequency inverters, interface to CMOS and TTL logic, and line drivers. Product Summary FEATURES • ■ ■ ■ ■ High Input Impedance

Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

VN66AFD

Abstract: TN0601L VN0606L VN0606M
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

vn66afd

Abstract: 0606L TN0601L VN0606L
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

VN0606L-G TO-92

Contextual Info: VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 3 .0 ÌÌ 1.5A Order Number / Package TO-92 VN0606L Features Advanced DMOS Technology □ Free from secondary breakdown

N-Channel Enhancement-Mode Vertical DMOS FETs

Contextual Info: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FETs / BVd0S BVqss R dS ON (max) 60V 3 .o n If Ordering Information Order Number / Package TO-92 VN0606L 1.5A Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

Contextual Info: VN0606 VN0610 fàkSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs BVdss/ If Ordering Information Order Number / Package b v tcs RdS ON (max) 60V 3n 1.5A VN0606L 60V 5£2 0.75A VN0610LL TO-92 Features Advanced DMOS Technology C These enhancement-mode (normally-off) transistors utilize a

VN66AFD

Abstract: VN66AF TN0601L VN0606L 0606l 7020.1
Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V 0.8 to 2.5 1.46

Contextual Info: Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

TO-237

Abstract: VN0606L VN66AFD VN0606M TN0601L
Contextual Info: TN0601L, VN0606L/M, VN66AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 VN0606M 3 @ VGS = 10 V 0.8 to 2

7020.1

Contextual Info: TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) TN0601L VN0606L rDS(on) Max (W) VGS(th) (V) ID (A) 1.8 @ VGS = 10 V 0.5 to 2 0.47 3 @ VGS = 10 V 0.8 to 2 0.33 3 @ VGS = 10 V

vn0606

Contextual Info: Ofì Supertex ï l~ IC m VN0606 VN0610 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV / R d S ON bq s (max) Order Number / Package if B Vdss TO-92 60V 3£i 1.5A VN0606L 60V 5Î2 0.75A VN0610LL Features Advanced DMOS Technology L i Free from secondary breakdown

N0610

Contextual Info: V N 0606 V N 0610 LJàSupertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B VDSS/ R d s <o n *D O N ) b v dgs (max) (min) 60V 3£i 60V Order Number / Package TO-92 1.5A VN0606L 0.75A VN0610LL Features Advanced DMOS Technology

Contextual Info: Sii ir u r r ^ f mmmmtß iwitfnwi | VN0606 VN0610 / / j r» N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^D S O N ^D(ON) b v dgs (max) (min) TO-92 60V 3Q 1.5A V N 0 60 6L 60V 5Q 0.75A VN 0610LL Features

VN0606

Contextual Info: VN0606 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0606 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain