VN1206L Search Results

Contextual Info: Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSs I R BVdgs 120V q S ON Order Number / Package '« O N ) (max) (min) TO-92 6.0Q 1.0A VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □

Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V (B R )D S S Min (V) 120 TD S (on) M a x ( Q ) VoS(th) (V) Id (A) 6 a vGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 3.8 Q • Low Threshold: 1.4 V • Low Input Capacitance: 35 pF

Contextual Info: □ï SUPERTEX INC 1 7 07732^5 DOOlbSÖ h V N 1206 V N 1210 r- -if-os’ N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information Order Number / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L

VN1206M

Contextual Info: VN 1206 SERI ES N-Channel Enhancement-Mode MOS Transistors B'SSSSSS PRODUCT SUMMARY PART NUMBER V BRJDSS VN1206L VN1206M r DS(ON •d (A) (A) PACKAGE 120 6 0.23 TO-92 120 6 0.26 TO-237 3 DRAIN TO-237 BOTTOM VIEW Performance Curves: VNDQ12 Jet* 1 SOURCE 2 GATE

VNDQ1

Abstract: 1206L VN1206L
Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

VN1210M

Abstract: VN1206M VN1206L
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

VN1206L

Abstract: VN1210M VN1206M
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

VN1206

Abstract: vn1210
Contextual Info: VN1206 VN1210 in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss / ^D S O N I d i ON) b v dgs (max) (min) TO-39 TO-92 TO-220 120V 6n 1.0A VN1206B VN1206L VN1206D 120 V io n

vn1206

Contextual Info: S i I I m m m m tß iw itfu w i | r ZJ r Ï u . f VN1206 VN1210 Irir', » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 VN1206B VN1206L VN1206D

1206L

Abstract: VN1206L
Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

VN1206

Abstract: VN1206L
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 120V 6.0Ω 1.0A VN1206L TO-92 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VN1206L Vishay Siliconix N-Channel 120-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers,

VN1206L

Abstract: VN1206M VN1210M
Contextual Info: VN1206L/M, VN1210M Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN1206L VN1206M 1 120 VN1210M rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V

vn1210m

Contextual Info: am & SS VNDQ12 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-237 • VN1206M, VN1210M Single TO-92 TO-226AA • VN1206L, VN1210L, TN1206L Single Chip • Available as VNDQ4CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics for Low Gate Drive

Contextual Info: V N 1206 V N 1210 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B Vdss I Order Number / Package ^DS O N *D(0N> BV dgs (max) (min) TO-39 TO-92 TO-220 120 V 60 1.0A VN1206B VN1206L VN1206D 120 V 1 0 ÌÌ

yn1206

Contextual Info: Temic Siliconix_YN1206L/M, YN1210M N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) VN1206L VN1206M 120 VN1210M r DS(on) Max (Q) VGS(th) Id (A) (V) 6@ VGS = 10 V 0.8 to 2 0.23 6@ VGS = 10 V 0.8 to 2 0.26

Contextual Info: Supertex inc. V N 1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 120V 6.0Q. 1.0A Order Number / Package TO-92 VN1206L Features Advanced DMOS Technology □ Free from secondary breakdown □

3821J

Contextual Info: Tem ic VN1206L/M, VN1210M Se m i c f l n d u c K i r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V ) r DS(on) VN1206M Vcs(ih)(V) I d (A ) 0.8 to 2 0.23 6 @ V o s - 10 V 0.8 to 2 0.26 10 @ V q s = 2.5 V 0.8 to 2

VN1210M

Abstract: VN1206L VN1206M
Contextual Info: VN1206L/M, VN1210M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 6 @ VGS = 10 V 0.8 to 2 0.23 6 @ VGS = 10 V 0.8 to 2 0.26 10 @ VGS = 2.5 V 0.8 to 2 0.2 VN1206L VN1206M 120 VN1210M

VN1206

Abstract: VN1206L
Contextual Info: VN1206 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 120V 6.0Ω 1.0A VN1206L TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

vn1210l transistor

Abstract: VN1206 supertex 08 vn1210 transistor VN1206 VN1206B VN1206D VN1206L VN1210 VN1210B VN1210D
Contextual Info: ni SUPERTEX INC 1 7 07732^5 GGDltSfi b J ~ VN1206 VN1210 r- N-Channe! Enhancement-Mode Vertical DMOS Power FETs 3f -os' Ordering Information Order Num ber / Package b v dss/ R DS(ON) *D(ON) BVDgs (max) (min) TO-39 TO-92 TO-220 120 V 6 fi 1.0A VN1206B VN1206L

VN1206L

Abstract: VNI210M VN1206M VN1210M
Contextual Info: Tem ic VN1206L/M, VN1210M S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number *DS on V(BR)DSS M i n (V ) VN1206L VN1206M 120 VN1210M Features Low On-Resistance: 3.8 Q Low Threshold: 1.4 V Low Input Capacitance: 35 pF

VN1206L

Contextual Info: VN1206L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 120 6 @ VGS = 10 V 0.8 to 2 0.23 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

IRF150CF

Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152