VPDS06 Search Results

tp0610t

Abstract: tp0610 part marking for tp0610t
Contextual Info: HtSæ Si, TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors BOTTOM VIEW TO-92 TO-226AA PRODUCT SUMMARY "W" •d (A) PACKAGE -60 10 -0.18 TO-92 -60 10 -0.12 SOT-23 PART NUMBER V (BR)DSS TP0610L TP0610T 1 SOURCE 2 GATE 3 DRAIN TOP VIEW SOT-23 Performance Curves: VPDS06

VPDS06

Contextual Info: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d

RA SOT23

Abstract: VP0610T
Contextual Info: VPDS06 P-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-92 TO-226AA • VP0610L, TP0610L Single SOT-23 • VP0610T, TP0610T Single Chip • Available as VPDS1CHP iTSìSSS D EVICE T Y P IC A L C H A R A C T E R IS T IC S O utput C h a ra c te ris tic s

VP0610, sot23

Abstract: marking HSs SOT23 TO206AC VP0610T
Contextual Info: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25

VP0610T

Abstract: 0610L BS250 TP0610T
Contextual Info: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4

mosfet bs250

Abstract: BS250 VP0610T 0610L AN804 TP0610L TP0610T VP0610L BS250 mosfet
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4

BS250

Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

equivalent of BS250

Abstract: BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T
Contextual Info: TP610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60

VP0610T

Abstract: vp0610t marking
Contextual Info: VP0610 SERIES P-Channel Enhancement-Mode MOS Transistors J 7 IS 3 & TO-92 TO-226AA BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BR)DSS (V) r DS(ON) ( fl) (A) PACKAGE VP0610L -6 0 10 -0.18 TO-92 VP0610T -6 0 10 -0.1 2 SOT-23 Performance Curves: •d 1 SOURCE

BS250

Abstract: TP0610L VP0610T AN804 TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix PĆChannel EnhancementĆMode MOS Transistors TP0610L TP0610T Product Summary VP0610L VP0610L BS250 Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T VP0610L

Contextual Info: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN

BS250

Abstract: mosfet bs250 VP0610T BS250 mosfet bs250 siliconix 0610L AN804 TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4

bs250

Abstract: mosfet bs250 tp0610lt VP0610T TP0610T
Contextual Info: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part N u m b e r V BR>DSS M in (V r DS(on) M a x (f ì) V GS(th) (V ) I d (A) TP0610L -60 10 @ V o s - -10 V -1 to -2.4 -0.18

2n7000 complement

Abstract: bs250 complement 2n7000+complement TP0610LVT 2N7000 transistor BS250
Contextual Info: •J E T * incorporated VPDS1 DIE P-Channel Enhancement-Mode MOS Transistor VPDS1CHP* BS250 TP0610LVT VP0610L/T ‘ Meets or exceeds specification for all part numbers listed below Source Pad 0.0041 0 . 104 0.0049 For additional design information please consult the

mosfet bs250

Abstract: BS250 0610L TP0610L VP0610T BS250 mosfet equivalent of BS250 AN804 TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60 10 @ VGS = –10 V –1 to –2.4

VP0610T

Abstract: BS250 tp0610lt 25Q10 TP0610T
Contextual Info: Tem ic TP0610L/T, VP0610L/T, BS250_s„leonlx P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610L BS250 Product Summary Part Number V BR DSS M in (V) rDS(on) M ax (Q ) VGS(th).(V) I d (A) TP0610L -6 0 10 @ VGS = - 1 0 V - I t o - 2 .4

mosfet bs250

Abstract: BS250 TP0610L part marking for tp0610t BS250 datasheet VP0610T equivalent of BS250 TO-92-18RM VP0610L TP0610T
Contextual Info: TP0610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

mosfet bs250

Abstract: BS250 VP0610T BS250 datasheet equivalent of BS250 part marking for tp0610t 0610L AN804 TP0610L TP0610T
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4