TP0610 Search Results

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

VP0610T

Abstract: 0610L BS250 TP0610T
Contextual Info: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4

TP0610K

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: TP0610K New Product Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) –60 6 @ VGS = –10 V –1 to –3.0 –185 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,

Contextual Info: TP0610E Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)30 I(D) Max. (A)110m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)310m Minimum Operating Temp (øC)

mosfet bs250

Abstract: BS250 VP0610T 0610L AN804 TP0610L TP0610T VP0610L BS250 mosfet
Contextual Info: TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L −60 10 @ VGS = −10 V −1 to −2.4 −0.18 TP0610T −60 10 @ VGS = −10 V −1 to −2.4

TP0610K

Contextual Info: SPICE Device Model TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

TP0610K-T1

Abstract: TP0610K-T1-E3 0533 TP0610K TP0610K-T1-GE3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

40244

Abstract: 250KL bs250kL BS250KL-TR1 BS250KLTR1
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2

TP0610T

Abstract: sot-23 MARKING CODE GS
Contextual Info: TP0610T P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number/Package TO-236AB* Product marking for SOT-23: -60V 10Ω -50mA TP0610T where ❋ = 2-week alpha date code T50❋ *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

BS250

Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

TP0610T

Contextual Info: TP0610T P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number/Package TO-236AB* Product marking for SOT-23: -60V 10Ω -50mA TP0610T where ❋ = 2-week alpha date code T50❋ *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

equivalent of BS250

Abstract: BS250 datasheet TA 7061 BS250 VP0610T part marking for tp0610t TO-92-18RM TP610L TP0610L TP0610T
Contextual Info: TP610L/T, VP0610L/T, BS250 P-Channel Enhancement-Mode MOS Transistors TP0610L TP0610T VP0610L VP0610T BS250 Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T –60

Contextual Info: TP0610K New Product Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (mA) –60 6 @ VGS = –10 V –1 to –3.0 –185 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers,

Contextual Info: TP0610T Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)120m @Temp (øC)150õ IDM Max (@25øC Amb)400m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)360m# Minimum Operating Temp (øC)-55

tp0610t

Abstract: tp0610 part marking for tp0610t
Contextual Info: HtSæ Si, TP0610 SERIES P-Channel Enhancement-Mode MOS Transistors BOTTOM VIEW TO-92 TO-226AA PRODUCT SUMMARY "W" •d (A) PACKAGE -60 10 -0.18 TO-92 -60 10 -0.12 SOT-23 PART NUMBER V (BR)DSS TP0610L TP0610T 1 SOURCE 2 GATE 3 DRAIN TOP VIEW SOT-23 Performance Curves: VPDS06

250KL

Abstract: 40244 BS250KL TP0610KL TO-92-18RM S402 0610K
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2

sot-23 GFs

Abstract: TP0610T
Contextual Info: Supertex inc. TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

TP0610T

Contextual Info: TP0610T P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: SPICE Device Model TP0610K www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

TP0606N5

Abstract: TP0610N3 TP0610N2 TP0606 TP0606N2 TP0606N3 TP0606N6 TP0610 TP0610N5 Tp0606N7
Contextual Info: TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE† -60V 3.5Ω -1.5A -2.4V TP0606N2

TP0610K-T1-E3

Abstract: TP0610K-T1-GE3 TP0610K-T1 TP0610K P-Channel TrenchFET Power MOSFET SOT-23 TP0610KT1E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3.0 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

BS250

Abstract: TP0610L VP0610T AN804 TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix PĆChannel EnhancementĆMode MOS Transistors TP0610L TP0610T Product Summary VP0610L VP0610L BS250 Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TP0610L -60 10 @ VGS = -10 V -1 to -2.4 -0.18 TP0610T VP0610L

250KL

Abstract: 40244
Contextual Info: TP0610KL/BS250KL Vishay Siliconix New Product P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) 6 @ VGS = −10 V −60 60 10 @ VGS = −4.5 V ID (A) 1 2 D 3 “S” TP 0610KL xxyy Device Marking Front View G 2

RA SOT23

Abstract: VP0610T
Contextual Info: VPDS06 P-Channel Enhancement-Mode MOSFET TYPE PACKAGE Single TO-92 TO-226AA • VP0610L, TP0610L Single SOT-23 • VP0610T, TP0610T Single Chip • Available as VPDS1CHP iTSìSSS D EVICE T Y P IC A L C H A R A C T E R IS T IC S O utput C h a ra c te ris tic s