VTD34F Search Results

BPW34F

Abstract: VTD34F
Contextual Info: VTD34F Alternate Source/ Second Source Photodiodes BPW 34F IN D U STRY EQUIVALENTI PACKAGE DIMENSIONS inch (mm 182 ( ¿ .6 2 ) 172 ( 4 . 3 7 )] (0 .5 8 ) .0 39 ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) ( 1. 0 0 ) ' .0 3 2 ( 0 .3 1 ) (2 .4 9 ) NOW. OPTICAL Ç. • r T

bpw 50

Abstract: PerkinElmer fyd-1150 K/PerkinElmer fyd-1150
Contextual Info: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

Contextual Info: SILICON PHOTODIODE VTD34FSMH BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

Contextual Info: Alternate Source/ Second Source Photodiodes VTD34FH BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

VTD34FSM

Abstract: bpw photodiode
Contextual Info: SILICON PHOTODIODE VTD34FSM BPW 34F INDUSTRY EQUIVALENT PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Infrared transmiting package • High sensitivity Planar silicon photodiode in an infrared transmitting, visible blocking molded plastic package.

940 nm

Abstract: BPW34F VTD34F
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

VTD34FH

Abstract: BPW34F
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34FH BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

Contextual Info: VTD34F Alternate Source/ Second Source Photodiodes BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) 182 (¿ .6 2 ) 172 (4 .3 7 )j ( 0 .5 8 ) ( 3 .3 0 ) .0 4 2 ( 1 .0 7 ) .0 3 9 ( 1 .0 0 ) ' .0 3 2 ( 0 .8 1 ) ( 2 .4 9 ) NOW. O P T IC A L Ç. } Ic a t h o o e K

SFH205

Abstract: BPW34F VTD205 VTD34F SECOND SOURCE
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

S1723-04

Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of