X16BIT Search Results

MR27V3266D

Abstract: LA5A6
Contextual Info: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

HANBit

Abstract: IN3064 KR Electronics 50-PIN HMF8M16F8V
Contextual Info: HANBit HMF8M16F8V-90 FLASH-ROM MODULE 16MByte 8M x 16-Bit – Memory Stack Type Part No. HMF8M16F8V- 90 GENERAL DESCRIPTION The HMF8M16F8V is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 100-pin, MMC connector FR4-printed circuit

Contextual Info: HYM41V331OODTYG 1Mx32, 1Mx16 based, PC133 DESCRIPTION T he H ynix H Y M 4V33100D TY G Series are 1M x16bits Synchronous DRAM M odules. T he m odules are com posed o f tw o 1M x16bits CM O S S ynchronous DR AM s in 400m il 50pin TSOP-H package, on a 132pin glass-epoxy printed circuit board. T w o 0.22uF and one

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

MR27V3266D

Contextual Info: 1 Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

DQ100

Abstract: transistor d514
Contextual Info: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

68PIN

Abstract: max4860
Contextual Info: HANBit HMF4M16J4V Flash-ROM Module 8MByte x16bit , 68-pin JLCC type, 3.3V Design Part No. HMF4M16J4V GENERAL DESCRIPTION The HMF4M16J4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in an x16bit configuration. The module consists of four 2M x 8bit FROM mounted on a 68-pin, JLCC connector FR4-printed circuit

Contextual Info: HY62UF16404C Series 256K x16bit full CMOS SRAM DESCRIPTION FEATURES T h e H Y 6 2 U F 1 6 4 0 4 C is a high speed, super low pow er and 4M bit full C M O S S R A M organized as 2 5 6 K words by 16bits. T h e H Y 6 2 U F 1 6 4 0 4 C uses high perform ance full C M O S process technology

Contextual Info: HYM72V32M636T6 32Mx64, 16Mx16 based, PC133 DESCRIPTION The H Y M 72V32M 636T6 Series are 32M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 16M x16bits CM O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in Bpin TS SO P package on a 168pm glass-epoxy

A9 npn

Contextual Info: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynamic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write

72-PIN

Abstract: HMFN16M16M8G RB3 marking SIMM FLASH MEMORY MODULE 72pin 16bit
Contextual Info: HANBit HMFN16M16M8G FLASH-ROM MODULE 32MByte 16M x 16-Bit Part No. HMFN16M16M8G GENERAL DESCRIPTION The HMFN16M16M8G is a high-speed NAND flash read only memory (FROM) module containing 16,777,216 words organized in a x16bit configuration. The module consists of eight 4M x 8 FROM mounted on a 72 -pin, double-sided, FR4printed circuit board.

MR27V3266D

Contextual Info: 1 Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

Contextual Info: HYM71V16635AT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix HYM 71V16635AT6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAMs in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSO P package on a 168pin glass-epoxy

Contextual Info: KM M 372F804B S DRAM MODULE KM M 372F 80 4B S EDO M o d e 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists ot eight 4M x16bits & four 4Mx4bits CMOS DRAMs in

Contextual Info: GM71C4170A/AL GM71CS4170A/AL GoldStar GOLDSTAR ELECTRON CO., LTD. 262,144 WORDS X16BIT CMOS DYNAMIC RAM D escrip tio n F ea tu res The GM71C4170A/AL is the new generation dynamic RAM organized 262,144x16 Bit. GM71C4170A/AL has realized higher density, higher performance and various functions by

auo 014

Contextual Info: GM71C4260A/AL GM71CS4260A/AL GoldStar 262,144 WORDS X16BIT CMOS DYNAMIC RAM GOLDSTAR ELECTRON CO., LTD. Description Features The GM71C4260A/AL is th e new generation d y n am ic RAM organized 2 6 2 ,1 4 4 x 1 6 Bit. GM71C4260A/AL has realized higher density,

MR27V3266D

Contextual Info: 1 Semiconductor MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

Contextual Info: HYM76V4635HGT6 4Mx64, 4Mx16 based, PC133 DESCRIPTION The H ynix H Y M 76V 4635A T6 Series are 4M x64bits Synchronous D R AM M odules. T he m odules are com posed o f fo u r 4M x16bits C M O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EE PR O M in 8pin TS S O P package on a 168pin glass-epoxy

Contextual Info: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynam ic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write

marking RY

Abstract: IN3064
Contextual Info: HANBit HMF8M16F8VS FLASH-ROM MODULE 16MByte 8M x 16-Bit , SMM 80Pin Part No. HMF8M16F8VS GENERAL DESCRIPTION The HMF8M16F8VS is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an x16bit configuration. The module consists of eight 2M x 8 FROM mounted on a 80-pin, MMC connector FR4-printed circuit board.

cc1c

Abstract: 6655h
Contextual Info: HYM71V16655HCT6 16Mx64, 8Mx16 based, PC100 DESCRIPTION The Hynix H Y M 71V16655HC T6 Series are 16M x64bits Synchronous DRAM Modules. T he m odules are com posed o f eight 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy

X16-BIT

Abstract: 64K SRAM
Contextual Info: H Y 6 2U F 1 610 1C S eries 64K x16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology and designed for high speed low power circuit

ci5 5t

Contextual Info: HYM71V16635HCT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix H YM 71V16635HC T6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CMOS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TS SO P package on a 168pm glass-epoxy

cq60

Contextual Info: HYM71V8655AT6 8Mx64, 8Mx16 based, PC100 DESCRIPTION The H ynix HYM 71V8655AT6 Series are 8M x64bits Synchronous DRAM M odules. The m odules are com posed o f four 8M x16bits CM OS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TS SO P package on a 168pln glass-epoxy