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    A 431 TRANSISTOR Search Results

    A 431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A 431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EIA-481-2

    Abstract: LIA130 431T
    Text: LIA130 Optically Isolated Error Amplifier Features • Optocoupler, Precision Reference, and Error Amplifier in a Single Package • 1.240V ± 1% Reference @ 25ºC • Linear Optical Coupler Technology with an Industry Standard 431-type • CTR 300% to 600% Linearity


    Original     		PDF LIA130 431-type 3750Vrms LIA130 431-type DS-LIA130-R00C EIA-481-2 431T

    el 431

    Abstract: No abstract text available
    Text: LIA130 Optically Isolated Error Amplifier Features • Optocoupler, Precision Reference, and Error Amplifier in a Single Package • 1.240V ± 1% Reference @ 25ºC • Linear Optical Coupler Technology with an Industry Standard 431-type • CTR 300% to 600% Linearity


    Original     		PDF LIA130 431-type 3750Vrms LIA130 431-type DS-LIA130-R00B el 431

    Untitled

    Abstract: No abstract text available
    Text: LIA130 Optically Isolated Error Amplifier Features • Optocoupler, Precision Reference, and Error Amplifier in a Single Package • 1.240V ± 1% Reference @ 25ºC • Linear Optical Coupler Technology with an Industry Standard 431-type • CTR 300% to 600% Linearity


    Original     		PDF LIA130 431-type 3750Vrms LIA130 431-type DS-LIA130-R00C

    LIA130

    Abstract: LIA130 R00D 431T Ron Lenk
    Text: LIA130 INTEGRATED CIRCUITS DIVISION PRELIMINARY Features • Optocoupler, Precision Reference, and Error Amplifier in a Single Package • 1.240V ± 1% Reference @ 25ºC • Linear Optical Coupler Technology with an Industry Standard 431-type • CTR 300% to 600% Linearity


    Original     		PDF LIA130 431-type 3750Vrms LIA130 431-type DS-LIA130-R00D LIA130 R00D 431T Ron Lenk

    ZTX108B

    Abstract: ZR431 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21
    Text: Application Note 27 Issue 1 June 1996 ZR431 Application Note David Bradbury The ZR431 is an enhanced version of the industry standard 431. It is a three terminal shunt regulator giving excellent temperature stability and the capability of operating at currents from 50µA up


    Original     		PDF ZR431 to100mA. 100nA, ZTX108B 431 regulator 431 sot23 h a 431 transistor ic 431 ZR431Q1 capacitor c1 220uF 108B BAS21

    6MBP50RTA060

    Abstract: 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060
    Text: R-IPM3 and Econo IPM Series of Intelligent Power Modules Manabu Watanabe Yoshiyuki Kusunoki Naotaka Matsuda 1. Introduction Fuji Electric has developed and mass-produced several series of IGBT-IPMs insulated gate bipolar transistor-intelligent power modules , beginning with


    Original     		PDF CIPS2002, 6MBP50RTA060 6mbp160rta060 6MBP80RTA060 fuji ipm 6MBP100RTA060 7MBP50RTA060 6mbp20RTA060 7MBP160RTA060 fuji 6mbp 7MBP80RTA060

    sd 431 transistor

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in


    OCR Scan     		PDF bb53T31 PINNING-SOT186 BUK445-100A/B BUK445 -100A -100B K445-100A/B IE-02 1E-03 1E-04 sd 431 transistor

    2-7D101A

    Abstract: 2SA1431 transistor Toshiba
    Text: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hpE Linearity : hpE (l) = 100~32u (VCE = -2 V , le = -0.5A )


    OCR Scan     		PDF 2SA1431 2-7D101A 2SA1431 transistor Toshiba

    Untitled

    Abstract: No abstract text available
    Text: 2SA1431 TOSHIBA 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hpjr; Linearity • : hjrE(2)-70 (Min.) (Vc e = -2 V , Ic = -4 A )


    OCR Scan     		PDF 2SA1431 961001EAA2'

    2-7D101A

    Abstract: 2SA1431
    Text: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 100-320(VCe = -2 V , IC= -0.5A)


    OCR Scan     		PDF 2SA1431 961001EAA2' 2-7D101A 2SA1431

    2SA143

    Abstract: 2SA1431 2-7D101A
    Text: 2SA1431 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 431 Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hEE Linearity : hFE(l) = 100-320 (VCe = -2 V , IC= -0.5A )


    OCR Scan     		PDF 2SA1431 2SA143 2SA1431 2-7D101A

    2-7D101A

    Abstract: 2SA1431
    Text: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. MEDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hjrjr; Linearity : h p E ( l ) = 100-320 ( V c e = - 2 V , I c = -0 .5 A )


    OCR Scan     		PDF 2SA1431 961001EAA2' 2-7D101A 2SA1431

    DIODE 433

    Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
    Text: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75


    OCR Scan     		PDF IRFF430/4317432/433 IRFF430 IRFF431 IRFF432 IRFF433 O-205AF T-39-Ã DIODE 433 tl 431 R 433 A F433 AC15A

    29Z3

    Abstract: Transistor CODE FR m7am
    Text: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided


    OCR Scan     		PDF BCY67 BCY67 29Z3 Transistor CODE FR m7am

    Untitled

    Abstract: No abstract text available
    Text: • 4305271 0053^3 3Ì HARRIS TTE ■ HAS IR F430/431/432/433 IRF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 0 4 A A • 4.0A and 4.5A, 450V - 500V • rDS on = 1 -5 il and 2 .0 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F430/431/432/433 IRF430R/431R/432R/433R IRF430, IRF431, IRF432, IRF433 IRF430R, IRF431R, IRF432R IRF433R

    LM431ACM3

    Abstract: LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43
    Text: & Semiconductor LM 431 A d ju s ta b le Precision Z e n e r S h u n t R e g u la to r Features The LM431 is a 3-terminal adjustable shunt regulator with guaranteed temperature stability over the entire temperature range ot operation. The output voltage may be set at any


    OCR Scan     		PDF LM431 LM431ACM3 LM431AIM3 LM431BCM3 LM431BIM3 zener diode h49 LM43 431bc ic LM 356 LIA SOT23-3 lm 43

    2N3442

    Abstract: E271 2n4347
    Text: File Number 528.1 HA RR IS S E M I C O N D S E CT OR SbE T> 2N3442, 2N4347 4 3 0 2 2 7 1 Q Q H G 431 2 TÔ * H A S • -p High-Voltage Silicon N-P-N Transistors -3 3 - ‘3 T E R M IN A L D E S IG N A TIO N S c High-Power Devices for Applications in Industrial and Commercial Equipment


    OCR Scan     		PDF 2N3442, 2N4347 2N4347) 2N3442) 2N3442 2N4347. 2N3442. E271

    Untitled

    Abstract: No abstract text available
    Text: • 430 5 57 1 0 0 S 4 1Ô D 701 ■ [g HARRIS HAS IRFF430/431/432/433 IRFF430R/431R/432R/433R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 5 A F • 2 .2 5 A a n d 2 .7 5 A , 4 5 0 V - 5 0 0 V • rD S o n = and 2 .0 fl


    OCR Scan     		PDF IRFF430/431/432/433 IRFF430R/431R/432R/433R FF430, IRFF431, FF432, FF430R FF431R FF432R FF433R

    2N6431

    Abstract: 2N6432 2N6433 2N6430
    Text: Datasheet Central 2N6430 2N6432 2 N 6 431 2N6433 NPN PN P Semiconductor Corp. C O M P L E M E N T A R Y SILICON T R A N S IS T O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JE D E C T O -1 8 C A S E Manufacturers of W orld C la ss Discrete Sem iconductors


    OCR Scan     		PDF 2N6430 2N6431 2N6432 2N6433 2N6431 2N6430,

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


    OCR Scan     		PDF

    h a 431 transistor

    Abstract: LH 431 IC 431 1N3913 431 transistors
    Text: CÂ \X y . Series PTC 430, PTC 431 , V- /? % - High Voltage NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating - 400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators


    OCR Scan     		PDF

    Transistor PJ 431

    Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
    Text: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue


    OCR Scan     		PDF

    TFK u 116

    Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
    Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW


    OCR Scan     		PDF

    transistor c 6073

    Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
    Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005


    OCR Scan     		PDF 00003b2 TQ-204MA PTC102 transistor c 6073 TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b