A 986 TRANSISTOR Search Results

short circuit tracer

Abstract: MOS-Gated Transistors ESD Pushbutton data sheet Simple test MOSFET Procedures AN-964
Contextual Info: IR Application Note AN-986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Background II. A model for the ESD test circuit III. Experimental verification

2SA1986

Abstract: 2SC5358
Contextual Info: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C

Contextual Info: TO SHIBA 2SA1986 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 986 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X ^ . • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2

2SC5358

Abstract: 2SA1986
Contextual Info: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C

irfc110

Abstract: IRFC9230 reco relay IRLC014
Contextual Info: AN-986 ESD Testing of MOS-Gated Power Transistors HEXFET is a tradem ark o f International Rectifier By Steve C lem en te Introduction A ll se m ic o n d u c to r c o m p o n e n ts have been proven to be static sensitive to v arying degrees. U s e r’s co n cern o n this

Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage

KSD985

Abstract: KSD986
Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

D986-Y

Abstract: KSD986OS
Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

A 986 transistor

Abstract: SL 100 NPN Transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage: KSD985 : KSD986 Emitter-Base Voltage

BC 251 transistor

Abstract: 50V 1A power transistor
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcEO 150 Collector-Emitter Voltage: KSD985 VcEO 60 V VcEO

Contextual Info: KSD985/986 KSD985/986 Low Frequency Power Amplifier • Low Speed Switching Industrial Use TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-B ase Voltage V ceO 150 V C ollector-E m ltter Voltage : KSD985 V cE O

ksd 150 full safe

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE T O -126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit C ollector-Base Voltage VcEO 150 V C ollector-E m itter Voltage : KSD 985

KBU08

Abstract: ir receiver module sj 1838 rba9 h0075 8155 port ir receiver sj 1838 Nippon capacitors as11 ds hfe nv
Contextual Info: REJ09B0098-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8S/2114RGroup Hardware Manual

2SD986

Abstract: 2SD985 2SB795 2SB794 Nec 2sd986
Contextual Info: NPN SILICON DARLINGTON POWER TRANSISTORS 2SD985.2SD986 DESCRIPTION The2SD985, 2SD986 are darlington transistors built-in dumper PACKAGE DIMENSIONS diodes at E-C. They are suitable fo r use to operate from 1C w ith o u t predriver, in millimeters inches 8.5 MAX.

5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Contextual Info: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ]> I 711002 3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

npn darlington 500v 2a

Abstract: "Darlington Transistor" darlington power transistor power darlington npn transistor high current darlington transistor npn transistor 3A darlington KSD5018 NPN transistor collector base and emitter Darlington transistor
Contextual Info: KSD5018 NPN SILICON DARLINGTON TRANSISTOR HIGH VOLTAGE POWER DARLINGTON TR BUILT-IN RESISTOR BETWEEN BASE AND EMITTER FOR MOTOR DRIVE TO-220 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic VCBO 600 V Collector Emitter Voltage VCEO

2sd1348

Abstract: 2sd134 2sb986
Contextual Info: Ordering number:ENN1245C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB986/2SD1348 50V/4A Switching Applications Applications Package Dimensions • Power supplies, relay drivers, lamp drivers, electrical equipment. unit:mm 2009B [2SB986/2SD1348]

2SB986

Abstract: 2SD1348 ITR08810 2SB75 2SD175
Contextual Info: 2SB986 / 2SD1348 Ordering number : EN1245D SANYO Semiconductors DATA SHEET 2SB986 / 2SD1348 PNP / NPN Epitaxial Planar Silicon Darlington Transistors 50V / 4A Switching Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment.

ARC-182

Abstract: transistor Common emitter configuration PHOI
Contextual Info: an AMP company CW Power Transistor, 30 - 400 MHz 85W PHOI 04-85 v2.00 Features NPN Silicon Power Transistor Common Emitter Configuration Class AB Broadband Operation 85 Watt PEP Output Diffused Emitter Ballasting Resistors Gold Metallization System Proven in Thousands of ARC-182 Airborne Radios

ARC-182

Contextual Info: m a n A M P com pany CW Power Transistor, 85W 30 - 400 MHz PH0104-85 Features • NPN Silicon Pow er T ran sisto r • • • • • • C o m m o n E m itter C o n fig u ratio n Class AB B ro a d b an d O p e ra tio n 85 W att PEP O u tp u t D iffused E m itter B allasting R esistors

d1609

Abstract: transistor d1609 d1609 c d1609 transistor 2SD1348 2SB986 2SB75
Contextual Info: 2SB986 / 2SD1348 Ordering number : EN1245E SANYO Semiconductors DATA SHEET 2SB986 / 2SD1348 PNP / NPN Epitaxial Planar Silicon Transistors 50V / 4A Switching Applications Applications • Power supplies, relay drivers, lamp drivers, electrical equipment. Features

Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c VCBO v CEO (mA) (V) (V) :E @ lc e v CE (mA) (V) MATCHING VCE(SAT) @ >C (mA) (V) (MHz) h FE Vb e MAX *TYP MIN *r MAX MIN MIN MIN MAX % (mV) MD982 PNP AMPL/SWITCH 600 60 50 35 . 10 10 0.5 150