A03 RF AMPLIFIER Search Results

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

A03 transistor

Abstract: 3V02 88-FF
Contextual Info: S IE M E N S BGA420 Si-MMIC-Amplifier in SIEGET 25-Technoiogy Preliminary Data # • • • # # Cascadable 50 Q-Gain Block Unconditionally stable Gain |s21f= 1 3 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)

BFP405

Abstract: A03 RF amplifier A03 amplifier BCR400
Contextual Info: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise

A03 transistor

Abstract: microwave transducer BFY196 BFY 36 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz

A03 transistor

Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz

A03 transistor

Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Contextual Info: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz

A03 transistor

Abstract: BFY280
Contextual Info: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output J FREQ. MHz MODEL NO. GAIN, dB Typical at MHz 100 1000 2000 note 1 Min. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE POWER, dBm RANGE Typ. MAXIMUM OPERATING RESIS-6 DATA Style

af190

Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +17.5 dBm output FREQ.J MHz GAIN (dB) Typical at MHz MODELu NO. MAXIMUM POWER (dBm) 100 1000 2000 Note 1 Min. DYNAMIC RANGE VSWR (:1) Typ. Output (1 dB Input NF IP3 Comp.) (no (dB) (dBm)

A08 monolithic amplifier

Abstract: mar 11sm MAV-4 Code A08 RF Semiconductor A04 monolithic amplifier A03 monolithic amplifier MAV-11SM MAR-4SM marking a06 WW107
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω BROADBAND DC to 2.5 GHz MAR-SM MAV-SM up to +18 dBm output JFREQ. MHz MODEL NO. GAIN, dB Typical at MHz ABSOLUTE MAXIMUM RATING7 MAXIMUM DYNAMIC VSWR POWER, dBm RANGE Typ. note 5 note 1 Typ. Output Input (1 dB (no Comp.) damage)

MAV-4

Abstract: MAV3 MAV4 MAV 2 MAV-3 monolithic amplifiers MAV11
Contextual Info: broadband plug-in and surface mount Monolithic Amplifiers 50 ohms up to 66 mW +18.2 dBm output d c to 2.5 GHz case style selection ou tlin e d r a w in g s T ab le o f C o n t e n t s X -V OFREQ MHz MODEL NO. □ □ □ Q □ □ □ K f„ GAIN, dB Typical (at MHz)

A09 RF Amplifier

Abstract: Asy transistor DQ06 4 BU9534KV VQFP100 DQ05
Contextual Info: 01W136A Signal processor LSI with anti-shock memory controller for CD players BU9534KV Dimension Units : mm BU9534KV is a digital signal processor LSI with built-in pre-servo amplifier, and anti-shock memory controller developed for CD players. This pre-servo amplifier is

A03 monolithic amplifier

Contextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 6.0 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-3+ CASE STYLE: AF190

marking A03 amplifier

Contextual Info: Surface Mount Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • Cascadable ceramic package • Low noise figure, 6.0 dB typ. • Excellent repeatability • Aqueous washable • Protected under US Patent 6,943,629 RAM-3+ CASE STYLE: AF190

MMIC MAR-3

Abstract: A03 monolithic amplifier MMIC MAR-3 A03 monolithic amplifier TB-432-3 MAR3 MAR-3 MMIC Amplifier A03
Contextual Info: Drop-In Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • High gain, 12.5 dB typ. at 0.1 GHz • Low noise figure, 3.7 dB typ. • Exact foot print substitute for MSA-0385 • Cascadable, unconditionally stable • Aqueous washable

MAR-3

Contextual Info: Drop-In Monolithic Amplifier DC-2 GHz Product Features • Wideband, DC to 2 GHz • High gain, 12.5 dB typ. at 0.1 GHz • Low noise figure, 3.7 dB typ. • Exact foot print substitute for MSA-0385 • Cascadable, unconditionally stable • Aqueous washable

A03 MMIC

Abstract: mmic a03 A03 monolithic amplifier marking A03 HP MMIC marking code s22 marking sot-143 MSA-0311 MSA-0311-BLK MSA-0311-TR1
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0311 Features Description • Cascadable 50 Ω Gain Block The MSA-0311 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the surface mount plastic SOT-143 package. This MMIC is

A03 MMIC

Abstract: MMIC marking code S2 MMIC Amplifier A03 MMIC marking CODE 06
Contextual Info: What mLliM HEWLETT* PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0311 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2.3 GHz • 11.0 dB Typical Gain at 1.0 GHz • 9.0 dBm Typical Px dI! at -1.0 GHz • Unconditionally Stable

mar8

Abstract: mini-circuits MAR-8 VV105 monolithic amplifier A04 MAV-11 A08 marking MAR-8 MCL MAR-8 A07 RF Amplifier marking A06 amplifier
Contextual Info: MONOLITHIC AMPLIFIERS 50 Ω Flat-Pack BROADBAND DC to 2 GHz MAV MAR up to +17.5 dBm output MODEL NO. o o o o J FREQ. MHz GAIN, dB Typical at MHz note 1 fL fU 100 500 1000 2000 MIN. DC THERMAL CAPD Case MAXIMUM DYNAMIC VSWR ABSOLUTE DATA Style OPERATING RESISPOWER, dBm RANGE

TD 6316

Abstract: MSA-0386-TR1 TAPE HP MMIC mmic a03 msa-0386 MSA-0386-BLK MSA-0386-TR1
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0386 Features Description • Cascadable 50 Ω Gain Block The MSA-0386 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost, surface mount plastic package.