A0812 Search Results

g770HCD

Abstract: CRM1066C VFQFPN16 G770H G770 A0812 QMI519 crm1066 IDT5T9306NLGI CRM10
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA - 95138 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A0812-02 DATE: 9-Jan-2009 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: VFQFPN-16 and VFQFPN-28 (Standard and RoHS)

TO39 package

Abstract: JEDEC drawing
Contextual Info: Package Outline 3-Lead TO-39 Package Outline N2 ΦD ΦD1 Φa A β β Seating Plane 2 3 1 h 1 2 3 Φb α L j k Bottom View Symbol Dimension (inches) MIN NOM MAX α β 45O NOM 90O NOM Side View A Φa Φb ΦD ΦD1 h j k L .240 .190 .016 .350 .315 .009 .028

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor array consisting of four N-channel MOSFETs in a 20-Lead ceramic side-brazed DIP package. These transistors

2206N2

Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

hynix nand 1G

Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

HV209

Abstract: HV209FG HV209FG-G MS-026
Contextual Info: HV209 12-Channel High Voltage Analog Switch Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex HV209 is a 200V low charge injection 12-channel high voltage analog switch configured as 6 SPDT analog switches intended for medical ultrasound

85X15

Abstract: 63FBGA hynix nand hynix nand spare area bad block HY27 hynix hy27 hynix nand 1G hynix nand flash HY27U
Contextual Info: HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary 0.1 1) Add 1.8V Operation Product to Data sheet

P090380

Abstract: C4020 nortel meridian option 81c Mercator installation guide nortel meridian option 11c C4020 transistor m2216 Nortel Meridian 1 Option 11C C3050 m2216 telephone
Contextual Info: Enterprise Telephony and Call Centers Customer Documentation Catalogue Issue 9.3 Introduction Issue 9.3 of the Meridian 1 and Applications Customer Documentation Catalogue contains current customer documentation available outside of Canada and United States.

Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary

a0540

Abstract: A2730
Contextual Info: AC ADAPTERS AC output, U.S. version, wall plug-in type INPUT: 120VAC, 50/60 Hz. ALL MODELS ARE UL LISTED. El 41 SERIES, SIZE F El 35 SERIES, SIZE E WITH GROUND PIN SIZE G MODEL NO. A0410 A0420 A0430 A0440 A0450 A0460 A0470 A0480 A0490 A0510 A0520 A0530 A0540

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003

Contextual Info: SPECIFICATION CONTROL DRAWING A0812 WIRE, ELECTRIC, RADIATION-CROSSLINKED, POLYALKENE INSULATED, 10-15-93 SILVER-COATEDCOPPER.MEDIUMWEIGHT, AIRFRAME, 600 VOLT This specification sheet forms a part of the latest issue of Raychem Specification 44 and MIL-W-81044 as applicable.

Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

2N6660

Abstract: 125OC A091008 jedec Package TO-39
Contextual Info: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

diode marking 100-10 n2

Abstract: sivn 2210N2 125OC VN2210 VN2210N2 VN2210N3-G
Contextual Info: VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

ad818 transistor

Abstract: A0812 A0818 dual transistor ad811 AD810 transistor ad811 AD811 AD81B AD813 transistor ad813 dual differential
Contextual Info: MICRO POWER SYSTEMS INC m ~5l Dlf| bOTTMMM O O G S ^ O E MICRO POWER SYSTEMS AD810 AD811 NPN DUAL MONOLITHIC SILICON NITROX TRANSISTORS h pE > ISO @ 10/j A - 1mA V BE M ATCHIN G AD818 LOG CO N FO RM AN CE . . | V B E i • V g ^ | = .4m V T Y P . HIGH f r

Contextual Info: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003