A11T Search Results

Connector WPC

Contextual Info: User's Guide SLVU824A – January 2013 – Revised January 2013 bq500211A bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The

Contextual Info: Multilayer Chip Balanced Filter – SLFBF Series Operating Temp. : -40℃~+85℃ FEATURES Small size, enable high density mounting Low insertion loss, high attenuation Surface mount type, high reliability z ● ● APPLICATIONS Mobile communication system, such as GSM, DCS, PCS, etc.

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

PCM60P

Abstract: PCM56P PCM66P PCM66P-J PCM60P cmos 20-PIN TL602 APQ-25 046J 8W-1S10
Contextual Info: Or, Call C oìtom i Service a11-tOO-548-S132 USA Only « JR W -B W O W N 16-Bit CMOS Monolithic Audio DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • LOW COST 16-BIT 2-CHANNEL CMOS MONOLITHIC D/A CONVERTER • SINGLE SUPPLY +5V OPERATION • 50mW POWER DISSIPATION

DU03

Abstract: HY51V16400B
Contextual Info: HY51V16400B Series •HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

crystal 444 ndk 24

Abstract: MN101C c compiler
Contextual Info: MICROCOMPUTER MN101C MN101C28A/28C/28D/28F/28L LSI User’s Manual Pub.No.21428-022E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their

MN101C c compiler

Abstract: PWM space vector ANPC MN101C39 panasonic inverter air conditioner remote manual
Contextual Info: MICROCOMPUTER MN101C MN101C399/39C LSI User’s Manual Pub.No.21439-020E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their

Contextual Info: June 1996 Revision 1.0 . — ' D A TA S H E E T FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package with JEDEC pinout. DM4M4N320 supports 4K refresh.

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

24EB60

Abstract: transistor marking code wm9 15j100 RETMA RAILS 15EB100 B24G350 Acopian Power Supplies A050MX120 12EB120 22J100
Contextual Info: Increasing numbers of Acopian Power Supplies call for current information are now available with CE marking upon request. ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE (1 of 2) Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC

Contextual Info: <£> February1997 Revision 1.1 ~ D A T A S H E E T - ESA8UN324 2/4 -(60/70)(J/T)(G/S)-S 32MByte (8M x 32) CMOS EDO DRAM Module General Description The ESA8UN324(2/4)-(60/70()J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

Contextual Info: February 1997 Revision 1.1 D ATASHEET - FSA4UN324 2/4 -(60/70)J(G/S)-S 16MByte (4M x 32) CMOS DRAM Module General Description The FSA4UN324(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package with JEDEC pinout. DM4M4N320 supports 4K refresh.

15j100 capacitor

Abstract: W28NT1000 W48NT600 15j100 RETMA RAILS p022h P012H R36W MARKING CODE WM9 12EB70
Contextual Info: ACOPIAN PROMISES TO SHIP WITHIN THREE DAYS Acopian P.O. Box 638 Easton, PA 18044-0638 . . . and we keep that promise. For more than 40 years, Acopian has been shipping AC to DC power modules within three days after receipt of an order. During this period, the Acopian line has expanded from

Contextual Info: 93C95 ATM 25.6 MB Transceiver and Data Recovery 1C Technology, Incorporated PRELIMINARY October 3, 1996 Features • ■ Note: Check for latest Data Sheet revision before starting any designs. Integrated A TM25 PMD Sublayer Single Chip Interface Between TC Transmission

CSD97376CQ4M

Contextual Info: User's Guide SLVU928A – September 2013 – Revised October 2013 bq500212A bqTESLA Wireless Power TX EVM The bqTESLA wireless power transmitter evaluation module from Texas Instruments is a highperformance, easy-to-use development module for the design of wireless power solutions. The singlechannel transmitter enables designers to speed the development of their end-applications. The

Motorola TP182

Abstract: NFM60R30T222T1 5 pin PCB Mounted 3.5mm Stereo jack ACM0706-102-2PT SMD150/33-2 tdk ferrite pc30 C1162 NFM60R30T222 10uf 25V capacitor ACM0706
Contextual Info: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MSC8101EVM User’s Manual For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. ii MSC8101EVMUM/D User’s Manual For More Information

Contextual Info: H Y 5 1 1 6 4 1 0 •H Y U N D A I S e r ie s 4M x 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai's CMOS silicon gate process technology as well as advanced

A11t

Abstract: LTC 5650
Contextual Info: HY51V16100B Series - HYUNDAI 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques

Contextual Info: TOSHIBA TMP47P421A CM OS 4-BIT M ICRO CO NTRO LLER TMP47P421ADF The 47P421A is the system evaluation LSI of 47C221A/421A with 32K bits one-time PROM. The 47P421A programs/verifies using an adapter socket to connect with PROM programmer, as it is in 2732AD.

Contextual Info: November 1996 Revision 1.1 FUJITSU DATA SHEET FSA4UN364 2/4 -(60/70)J(G/S)-S 16MByte (4M x 36) CMOS DRAM Module General Description The FSA4UN364(2/4)-(60/70)J(G/S)-S is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. FSA4UN3644 supports 4K refresh. FSA4UN3642

HP 450 optocoupler

Abstract: optocoupler HP 450 f A11t ul file e55361 HCPL-m456 HP 450 opto coupler
Contextual Info: Thn% HEW LETT WLZM P A C K A R D Small Outline, 5 Lead Intelligent Power Module Optocoupler Technical Data HCPL-M456 Features • Performance Specified for Common IPM Applications Over Industrial Temperature Range: -40°C to 100°C • Fast Maximum Propagation

A11t

Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881 A - MAY 1995 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

Contextual Info: October 1996 Revision 1.0 D A T A S H E E T - ESA 4UN324 2/4 -(60/70)(J/T)(G/S)-S 16MByte (4Mx 32) CMOS EDO DRAM Module General Description The ESA4UN324(2/4)-(60/70)(J/T)(G /S)-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module