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    A12E Search Results

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    SM320C6701GJCA12EP Texas Instruments Enhanced Product Floating-Point Digital Signal Processor 352-FCBGA -40 to 105 Visit Texas Instruments Buy
    SF Impression Pixel

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    Rochester Electronics LLC BGM15LA12E6327XTSA1

    IC AMP LTE 700MHZ-1GHZ 12ATSLP
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    Vishay Siliconix SQJA12EP-T1_GE3

    N-CHANNEL 100-V (D-S) 175C MOSFE
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    JW Winco Inc 6T63A12/E

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    A12E Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    A12E Matthey Silver Mica Capacitors 1976 Scan PDF
    A12EB NKK Switches Toggle Switches, Switches, SWITCH TOGGLE SPDT 0.4VA 28V Original PDF
    A12EB1 NKK Switches Toggle Switches, Switches, SWITCH TOGGLE SPDT 0.4VA 28V Original PDF
    A12EB-GB NKK Switches Toggle Switches, Switches, SWITCH TOGGLE SPDT 0.4VA 28V Original PDF
    A12EH NKK Switches Toggle Switches, Switches, SWITCH TOGGLE SPDT 0.4VA 28V Original PDF
    A12EH-BE NKK Switches Switches - Toggle Switches - SWITCH TOGGLE SPDT 0.4VA 28V Original PDF
    A12EP NKK Switches Toggle Switches, Switches, SWITCH TOGGLE SPDT 0.4VA 28V Original PDF
    A12EV NKK Switches Toggle Switches, Switches, SWITCH TOGGLE SPDT 0.4VA 28V Original PDF

    A12E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DTS-430

    Abstract: No abstract text available
    Text: PCM5310 PC M5 310 Burr-Brown Audio www.ti.com . SLES244 – FEBRUARY 2009


    Original
    PDF PCM5310 SLES244 24-Bit, 96-/192-kHz, DTS-430

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original
    PDF RX630 32-Bit RX600 R01UH0040EJ0160

    bv228

    Abstract: S1C33210 S1C33L01 MF1517-01 CP4D
    Text: MF1517-01 CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33210 Technical Manual S1C33210 PRODUCT PART S1C33210 FUNCTION PART NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice.


    Original
    PDF MF1517-01 32-BIT S1C33210 S1C33210 imEH54 bv228 S1C33L01 MF1517-01 CP4D

    R01US0032EJ

    Abstract: No abstract text available
    Text: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original
    PDF RX63T 32-Bit RX600 R01UH0238EJ0210 R01US0032EJ

    mpc 1488

    Abstract: BCM 4334 bcm 4330 IRQ15 RX630 MOV rx630 harvard architecture block diagram PROCESSOR ALI 3329 NXP receiver 125KHz R01US0032EJ
    Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original
    PDF RX630 32-Bit RX600 R01UH0040EJ0120 mpc 1488 BCM 4334 bcm 4330 IRQ15 MOV rx630 harvard architecture block diagram PROCESSOR ALI 3329 NXP receiver 125KHz R01US0032EJ

    Renewal battery

    Abstract: PROCESSOR ALI 3329 IR124 3156 SHARP 357 Hall sensors marking code D diode ir048 Power Diode 818 EB53 R5F5630BCDFC
    Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series Preliminary Preliminary Specification This is a Preliminary specification and is subject to change. All information contained in these materials, including products and product specifications,


    Original
    PDF RX630 32-Bit RX600 R01UH0040EJ0050 Renewal battery PROCESSOR ALI 3329 IR124 3156 SHARP 357 Hall sensors marking code D diode ir048 Power Diode 818 EB53 R5F5630BCDFC

    Untitled

    Abstract: No abstract text available
    Text: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33301 Technical Manual NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


    Original
    PDF 32-BIT S1C33301 E-08190

    B17C

    Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
    Text: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051


    Original
    PDF PK-41661-001 -41661-ANA102-* -A2A102 -A3A102 -A4A102 -A5A102 -A6A102 -A7A102 -A8A102 -A9A102 B17C 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501

    A12sc

    Abstract: A12S scs220
    Text: PCM5310 PC M5 310 Burr-Brown Audio www.ti.com . SLES244 – FEBRUARY 2009


    Original
    PDF PCM5310 SLES244 24-Bit, 96-/192-kHz, A12sc A12S scs220

    D12DT

    Abstract: D12DT 10 HF34 PGA-L01R A12E DR96 DTS530 ZR12 DMS12 DUC3
    Text: PCM5310 PC M5 310 Burr-Brown Audio www.ti.com SLES244A – FEBRUARY 2009 – REVISED JANUARY 2010 24-Bit, 96-/192-kHz, Asynchronous, 4-Channel/4-Channel Audio Codec with 2-VRMS Driver, Headphone Driver, and 6 Audio Interface Ports Check for Samples: PCM5310


    Original
    PDF PCM5310 SLES244A 24-Bit, 96-/192-kHz, D12DT D12DT 10 HF34 PGA-L01R A12E DR96 DTS530 ZR12 DMS12 DUC3

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original
    PDF RX630 32-Bit RX600 R01UH0040EJ0150

    Untitled

    Abstract: No abstract text available
    Text: LH5164AV FEATURES CMOS 64K 8K x 8 Static RAM PIN CONNECTIONS • 8,192 x 8 bit organization TOP VIEW 28-PIN SOP • Access time: 200 ns (MAX.) f O O > El 'S 28 1• • Supply current (MAX.): NCC Operating: 248 mW A12E 2 27 □ WE a 7C 3 26 □ 55 mW (tRC, twc = 1 l^s)


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    PDF LH5164AV 28-pin, 450-mil 28-PIN 28TSOP TSOP028-P-0813) 28ilininn LH5164AV

    A44E

    Abstract: C14F A12E C22F A33E C101E cs5f A15E C12E C14E
    Text: I 'E' Finish Resin Encapsulated I Tem perature Range — 55°C to + 1 0 0 °C Type Capacitance pF C5E C6E C12E A12E C14E A15E A25E C101E C201E C202E C203E C204E A33E C33E C35E 271 681 2001 2001 2001 5 600(3 1501 4001 10001 - 680 1500 3500 3500 3500 6000


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    PDF C101E C201E C202E C203E C204E C55H/F C77H/ C55FA C77FA A44E C14F A12E C22F A33E cs5f A15E C12E C14E

    Untitled

    Abstract: No abstract text available
    Text: CMOS 4M 512K x 8 Mask-Programmable ROM PIN CONNECTIONS • 524,288 words x 8 bit organization TOP VIEW f 1• O E^Ô Ë/D C E • Power consumption: Operating: 357.5 mW (MAX.) A ie E 2 31 E a 18 A15E 3 30 □ a 17 A12E 4 29 □ a 14 A7E 5 28 □ a 13 A0 e


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    PDF 32-PIN 32-pin, 600-mil 525-mil 400-mil 32TSOP400

    A18E

    Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
    Text: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


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    PDF F320S3- LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L H28F320S3XX-L11 LH28F320S3XX-L14 SSOP056-P-0600) FBGA080/064-P-0818) A18E 56-PIN LH28F320S3H-L LH28F320S3-L A17OI

    23C512-20

    Abstract: 23C512A
    Text: HM 23C512,HM 23C512A,HM 23C512M ,HM 23C512AM 64K X 8 CMOS ROM General Description The HM 23C512 and HM 23C512A high performance Read Only Memories are organized as 65,536 words by 8 bits with access times 150 ns to 200 ns. The ROMs are designed to be compat­


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    PDF 23C512 23C512A 23C512M 23C512AM 23C512-20

    M29F800A3BT12

    Abstract: m29f800a3br 29F800A
    Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max


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    PDF M29F800A3/D M29F800A3-- M29F80QA M29F800A3-12 M29F800A3 M29F800A2 48-Pin M29F800A3U M29F800A3B M29F800A3BT12 m29f800a3br 29F800A

    Untitled

    Abstract: No abstract text available
    Text: P F 805-05 EPSON SRM20V1OOLLMX7/SLMX7 1M-Bit Static RAM • • • • • • DESCRIPTION Low Supply Voltage Wide Temperature Range Low Supply Current Access Time 70ns 2.7V 131,072 Wordsx8-bit Asynchronous T h e S R M 2 0 V 1 0 0 L L M X 7 / S LM X 7 is an 1 3 1 ,0 7 2 w ordsx8-bit asynchronous, static, random access m em ory on a


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    PDF SRM20V1OOLLMX7/SLMX7 SRM20V100LLMX7/SLMX7

    A7Z CODE

    Abstract: 1N914 28F020 28F020-15 CAT28F020
    Text: I_ V ^ S T CAT28F020 L icen sed In tel second source 2 Megabit CMOS Flash Memory FEATURES Commercial, Industrial and Automotive Tem ­ perature Ranges • Fast Read Access Time: 120/150/200 ns ■ Low Power CMOS Dissipation: - Active: 30 mA max CMOS/TTL levels


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    PDF CAT28F020 32-pin CAT28F020 28F020 28F020 CAT28F020NI-12TE7 A7Z CODE 1N914 28F020-15

    TMM2764D

    Abstract: 28n15 TC5563APL-12L TC5563APL-10L TC5563APL-15L TC5565APL
    Text: 8,192 W O RD X 8 BIT CM O S STATIC RAM Id e s c r i p t i o n I The TC5563APL is a 65,536 b it s ta tic ran d o m access m em o ry o rg an ized as 8,192 w ords by 8 b its u sin g CMOS technology, an d o p erate s from a sin g le SV supply. A dvanced c irc u it te ch n iq u es


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    PDF TC5563APL 100ns/120ns/150ns. 100ns/div TC5563APLâ TC5563APL-12L DIP28-P-300B) TMM2764D 28n15 TC5563APL-12L TC5563APL-10L TC5563APL-15L TC5565APL

    2183A

    Abstract: No abstract text available
    Text: KM68V1000C, KM68U1000C Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 128K x 8 • Power Supply Voltage KM68V1000C family : 3.3V ± 0.3V KM68U1000C family : 3.0V ± 0.3V


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    PDF KM68V1000C, KM68U1000C 128Kx8 KM68V1000C 32-SOP, 32-TSOP 32-sTSOP 2183A

    HY628400LLG-I

    Abstract: DV06 138-884
    Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


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    PDF HY628400-I 512Kx 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I HY628400LLG-I DV06 138-884

    A1013-O

    Abstract: No abstract text available
    Text: O ld Semiconductor MSÌH51V257CL 32,768-Word x 8-Bit CM OS STATIC RAM DESCRIPTION The MSM51V257CL is a 32,768-word by 8-bit CMOS static RAM featuring 2.7 V to 3.6 V power supply operation and direct LVTTL input/output compatibility. Since the circuitry is completely


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    PDF H51V257CL 768-Word MSM51V257CL 768-word MSM51V257CL, MSM51V257CL A1013-O

    BFJ 64

    Abstract: No abstract text available
    Text: 32 0 S 5 - L _ S 5 H- L 7 / 1 5 / 9 8 7 : 5 7 PM P age 1 SHARP LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION High performance read access time The LH 28F320S 5-L/S5H -L flash m em ories with


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    PDF LH28F320S5-L/S5H-L 28F320S 28F320S5XX SSOP056-P-0600) FBGA080/064-P-0818) BFJ 64