A17 6 PIN Search Results

BX R435

Abstract: bx r433 74hct05 A53 SMD 75C185 D9PRS CRYSTAL 14.318MHZ 2N7002-SOT23 SMD SOT23 a41 ABB cp50
Contextual Info: A B C VCC_CORE D +3.3V E +3.3V +3.3V E13 R15 A17 4 3 BG#0/HAHOLD 3 BR#0/HLOCK# 3 TS#/HADS# 3 XATS#/HBE#3 3 3 3 A0/HBE#5 A1/HBE#6 A2/HBE#7 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 M1 K13 L1

xc5202pc84

Abstract: XC5202-PC84 XC4003APC84 XC4010PC84 XC5204PC84 XC4003PC84 xc5210pc84 XC5204-PC84 XC5210PC XC4005PC84
Contextual Info: 84-Pin PLCC XC4000/XC5200 Common Footprint A16 O A17(O) GND 12 GCK1 13 TMS(I) I/O 9 8 7 6 5 4 3 AAAAAAAAAAAAAA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAAAAAAAAAAAA AA AA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAAAAAA

XC4005

Abstract: xilinx xc5204 XC4002A XC4003A XC4004A XC4005A
Contextual Info: 84-Pin PLCC XC4000/XC5200 Common Footprint A16 O A17(O) GND 12 GCK1 13 TMS(I) I/O 9 8 7 6 5 4 3 AAAAAAAAAAAAAA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAAAAAAAAAAAA AA AA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAA AA AAAAAAAA AAAAAAAA AAAAAA AAAA AAAA AAAAAAAA

Contextual Info: WHITE MICROELECTRONICS 256Kx4 SRAM WPS256K4-XRJX PRELIMINARY# PLASTIC PLUS FEATURES • Access Times 15,17, 20nS PIN CONFIGURATION TOP VIEW NCC 1 A3 [ I 2 A2 C 3 A ir 4 AOC 5 S5C 6 i/oí C 7 vccC 8 v ss C 9 1/02 d 10 W E □ 11 A17 m 12 A 1 6 d 13 A 1 5 C 14

32-PIN

Abstract: DS1249Y
Contextual Info: DS1249Y DS1249Y 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • JEDEC standard 32–pin DIP package

Contextual Info: HM628511HI Series Ordering Information Type No. Access time Package HM628511HJPI-12 HM628511HJPI-15 12 ns 15 ns 400-mil 36-pin plastic SOJ CP-36D Pin Arrangement HM628511HJPI Series A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 CS 6 31 OE I/O1

36-PIN

Contextual Info: HM62W8511HI Series Ordering Information Type No. Access time Package HM62W8511HJPI-15 15 ns 400-mil 36-pin plastic SOJ CP-36D Pin Arrangement HM62W8511HJPI Series A0 1 36 NC A1 2 35 A18 A2 3 34 A17 A3 4 33 A16 A4 5 32 A15 CS 6 31 OE I/O1 7 30 I/O8 I/O2 8

DS1249AB

Abstract: DS1249Y
Contextual Info: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27

Contextual Info: TT WPS512K8-XRJX M/HITE /M ICRO ELECTRONICS 512Kx8 SRAM PRELIMINARY * PLASTIC PLUS FEATURES • Access Tim es of 15. 20, 25ns PIN CONFIGURATION TOP VIEW AO [ I 1 ^ 35 □ A18 A2T 3 34 □ A17 A3 [Z 4 33 □ A16 A4 □ 5 32 □ A15 CSE 6 7 30 □ 1/01 c

static ram 2048K 70 ns

Abstract: DS1249AB DS1249Y
Contextual Info: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27

CSR application

Abstract: CSR-4 Transistor z1 LH28F004SU-Z1 LH28F008SA CSR34
Contextual Info: LH28F004SU-Z1 FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 100 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

LH28F008SC

Abstract: 28F008SA 42-PIN 44-PIN
Contextual Info: LH28F008SC FEATURES 8M 1M x 8 Flash Memory 42-PIN CSP TOP VIEW • High-Density Symmetrically-Blocked Architecture – Sixteen 64K Erasable Blocks • High-Performance 1 2 3 4 5 6 7 A A5 A8 A11 VPP A12 A15 A17 B A4 A7 A10 VCC A13 NC A18 C A6 A9 RP CE A14

NC80

Abstract: LH28F004SU-NC LH28F008SA 0C000
Contextual Info: LH28F004SU-NC FEATURES • 512K x 8 Word Configuration • 5 V Write/Erase Operation 5 V VPP 40-PIN TSOP TOP VIEW A16 1 40 A17 A15 2 39 GND A14 3 38 NC A13 4 37 NC 80 ns Maximum Access Time A12 5 36 A10 32 Independently Lockable Blocks (16K) A11 6 35 DQ7

Contextual Info: TT WHITE MICROELECTRONICS 2 5 6 K x 16 S R A M WPS256K16-XUX p r b jm in a r y * PLASTIC PLUS FEATURES PIN CONFIGURATION TOP VIEW AO c 1 44 □ A17 A1 c 2 43 □ A16 A2 c 3 42 □ 41 □ A15 40 □ LJB 39 □ LB A3 c 4 A4 c 5 CS c 6 1/01 c 7 38 I/02 c 8

34-pin

Abstract: 32-PIN DS1250 DS1250AB DS1250Y
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • Read and write access times as fast as 70 ns

Contextual Info: JUP 8 6 1992 molaic 1M X 8 SRAM MS81000RKXA-85/10/12 Issue 1.1 : June 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. Pin Definition 1,048,576 x 8 CMOS High Speed Static RAM vcc A0 A1 A2 A3 DO D1 A4 AS A6 A7 A8 A13 02 CS A1S A16 A17 A9 GND OE

DS1250

Abstract: DS1250W DS9034PC
Contextual Info: DS1250W PRELIMINARY DS1250W 3.3V 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 150 ns

DS1250

Abstract: DS1250AB DS1250Y DS9034PC
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 70 ns

A64S16161

Abstract: AMIC TECHNOLOGY 256X16 ASCEND VCC
Contextual Info: A64S16161 Preliminary 2M X 16 Bit Low Voltage Super RAM Features ● Memory Cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12

Contextual Info: A64S16161 Preliminary 2M X 16 Bit Low Voltage Super RAM Features ● Memory Cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12

Contextual Info: A64S06161 Preliminary 1M X 16 Bit Low Voltage Super RAM Features ● Memory cell : Dynamic memory DRAM ● Refresh: Completely free 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC E VCC DQ12

34-pin

Abstract: DS1250 DS1250AB DS1250Y DS9034PC 4267B
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 70 ns

DS1250

Abstract: DS1250AB DS1250Y DS9034PC
Contextual Info: DS1250Y/AB DS1250Y/AB 4096K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A18 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 A6 6 27 A8 A5 7 26 A9 A4 8 25 A11 A3 9 24 OE • Read and write access times as fast as 70 ns

DS1270

Abstract: DS1270AB DS1270AB-70 DS1270Y DS1270Y-70
Contextual Info: DS1270Y/AB DALLAS DS1270Y/AB 16M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 5 years m inim um data retention in the absence of external power NC 1 1 36 | A20 1 2 35 | A18 1 3 34 | NC A16 1 4 33 | A15 A14 1 5 32 | A17 A12 1 6 31 1