A1B 80 Search Results

aegis A2a

Abstract: aegis A1B A2B 450 DO-205AB aegis A1A aegis a2b aegis DSASW0010065
Contextual Info: AEGIS SEMICONDUTORES LTDA. A1A:450.XX VOLTAGE RATINGS Part Number VRRM , VR V Max. rep. peak reverse voltage O This datasheet applies to: VRSM , VR (V) Max. nonrep. peak reverse voltage Metric thread: A1A:450.XX, A1B:450.XX O TJ = 0 to 200 C TJ = -40 to 0OC

Contextual Info: DS1750Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1750Y/AB Dual Voltage Partitioned 4096K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of VCc • Data is automatically protected during power loss A1B I1 1 321 2 3 4 31 1 A16 I1 A14 I1

A12B

Abstract: A14B a17b DS1280 A10B A11B A13B DS1280FP-80
Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for

IEC793

Contextual Info: Alcatel Multimode Fiber 50/125 Ref. A1b Process The fibers are manufactured using the APVD process. This is a deposition of Silicium dioxide and germanium dioxide inside a silica tube. The Alcatel APVD has been specifically developed for a mass production of fibers with a high

aegis A1B

Abstract: aegis A1A aegis A2a aegis a2b aegis A1B 80 DO-205AA aegis A1A aegis 600/diode aegis a2b
Contextual Info: AEGIS SEMICONDUTORES LTDA. A1A:100.XX VOLTAGE RATINGS Part Number VRRM , VR V rep. peak reverse voltage This datasheet applies to: Max. VRSM , VR (V) Max. nonrep. peak reverse voltage O O Metric thread: A1A:100.XX, A1B:100.XX O TJ = 0 to 180 C TJ = -40 to 0 C

dallas ds1280

Abstract: A12B A18B a17b DS1280 A10B A11B A13B DS1280FP-80
Contextual Info: DS1280 DS1280 3-Wire to Bytewide Converter Chip PIN ASSIGNMENT • Adapts JEDEC bytewide memory A2R A1B A1R A0B A0R RST CLK GND VCC DQE CEB CER WEB WER OEB OER FEATURES to a 3-wire serial port • Supports 512K bytes of memory • 68-pin version provides arbitration mechanisms for

EABC80

Abstract: ca10 HABC80 EABC 80
Contextual Info: Dreifachdipd« - Triode für AM-PM-Demodulmtion und KT-YerStärkung a1B HABC80 *n <o o “ tc <o kBC,sAB 1 m ax. 21 Gewicht ca. 10 g 1»Heizerwerte für Serienspeisun# :-feiz Spannung Heizstrom Oxydkatode, indirekt geheizt V-h h ca. 19*0 0,15 y A Die übrigen Daten und Kurven sind denen der Type EABC 80 gleich«

Z5U diode

Contextual Info: 積層陶瓷電容器 MULTILAYER CERAMIC CAPACITORS MODE : A1B MODE : A2Y T w T L d F F F=2.5 mm F=5 mm d=0.6mm SIZE CODE AND DIMENSIONS : Units in Inches millimeter SIZE CODE L R15 .150 (3.81) R20 R30 T LEAD DIAMETER(d) LEAD LENGTH(L) .150 (3.81) .100

Neon Lamp A9A

Abstract: Neon Lamp 2ml Neon Lamp a2b B6A NE-21 715AS15 NE-2D ne51hr 56PR200 55-112R-0 6S6DC-120V
Contextual Info: CML Innovative Technologies MANU 067 CODE FIG. 1 FIG. 2 FIG. 4 ELECTRICAL INDUSTRY LAMPS FIG. 21 FIG. 22 FIG. 2 NEON LAMPS Cat. No. B6A NE-21 2ML(NE-38S) A1A(NE-2) A1B A1C A2A A2B(NE-2V) A9A(NE-2E) C2A(NE-2H) C2A-T(NE-2HT) A1G A1H C7A(NE-2D) C9A(NE-2J) *For 220-250 Volts

jackcon

Abstract: CC jackcon Z5U 2200 M 56ac
Contextual Info: ZN U MULTILAYER CERAMIC CAPACITORS MODE A1B MODE : A2Y 1u ~ r\• I L 1 - t- l T H fri F= 2.5 m m F=5 m m d = 0 .6 m m SIZE CODE AND DIMENSIONS : Units in Inches m illim e te r SIZE CODE L R15 .150 (3.81) T LEAD DIAMETER(d) .100 (2.54) 0.024 (0.60) W .150

Contextual Info: ± DRW NO. ZONE ALL D 4 , B4 A4 PART .NUMBER GROUND.CONTACT POST 960-610Y-A 0A 960-610Y-A 0B 960-610Y -A 0C 9 6 0 - 6 1 0 Y - A1A 9 6 0 - 6 1 0 Y - A1B 9 6 0 - 6 1 0 Y - A1C NO YES YES NO YES YES YES YES YES NO NO NO C -9 6 0 -6 1 0 Y -5 0 0 REV SCR NUMBER

Contextual Info: ± TA B LE 1 P A R T NUMBER REV GROUND C O N T A C T MOUNTING POST 960-310Y-A0A B NONE Y ES 960-310Y-A0B B Y ES 960-310Y-A0C 960-310Y-A1A 9 6 0 - 3 1 0 Y - A1B B B 176-2005-740 176-2005-809 B B 960-310Y-A1C NONE Y ES NO 176-2005-740 176-2005-809 NO NO DRW NO.

Contextual Info: ± TABLE 1 DRW NO. C-960-510Y-500 ZONE REV AL L A S CR N UMB ER A A S Y - 8 N 3 P 6 W .VER01 B MSPE-9B9JQS.VER01 POST P A R T NUMBER GROUND C O N T A C T K EY P O S I T I O N 960-510Y-A0B 960-510Y-A0A 9 6 0 - 5 1 0 Y - A1B YES NO NO KEY NO KEY Y ES Y ES YES

Contextual Info: ± DRW NO. GROUND C O N T A C T 960-410Y-A0B 960-410Y-A0A YES NO KEY Y ES NO YES NO KEY NO KEY Y ES NO NO NO KEY NO YES YES NO KEY NO KEY Y ES NO 9 6 0 - 4 1 0 Y - A1B 960-410Y-A1A 960-410Y-A0C 960-410Y-A1C K EY P O S I T I O N ZONE REV AL L A B DC POST S C R NUMBER

L3360

Abstract: 939B
Contextual Info: P a r t N u m b e r • WSB-XXX-A1B—3B 1B -2 Notes M aterial B ody : G la ss F ib e r R e in fo rc e d P o ly b u ty le n e T e r e p h th a la te P .B .T . UL 94V —0 R a te d C o n ta c ts : P h o s p h o r B ro n z e s e le c tiv e g o ld p la tin g o v e r n ic k e l.

G530T

Contextual Info: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a

Contextual Info: "HYUNDAI HY67V18110/111 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a posrtiveedge triggered clock K .

Contextual Info: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge

Contextual Info: -HYUNDAI HY67V18100/101 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .

Contextual Info: H Y 6 7 V 1 6 1 1 0 /1 1 1 HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIM INARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a

Non-Linear Circuits Handbook Analog Devices

Abstract: remote irrigation control system Top Octave Synthesizer fuel tank AN-311 LM394 LF412 LM329 LM331A MM74C76
Contextual Info: A number of instrumentation applications can benefit from the use of logarithmic or exponential signal processing techniques. The design and use of logarithmic/exponential circuits are often associated with involved temperature compensation requirements and difficult to stabilize feedback

Contextual Info: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .

5252 f 1110

Abstract: 5252 f 1101 EC000 MC68306 DRA-20 tas 5253
Contextual Info: SECTION 5 SYSTEM OPERATION This section contains detailed descriptions and programming information for the system functions and registers outside the EC000 core in the MC68306. NOTE None of the MC68306 internal resources are accessible by an external bus master. The following address map and operation

Au1000

Abstract: Alchemy Semiconductor au1000 ALCHEMY SEMICONDUCTOR be0b 416SP a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
Contextual Info: APPLICATION NOTE EPSON GRAPHICS INTERFACES AND THE AU1000 Matt Brandt Epson Graphics Interfaces and the Au1000 REVISION NO.: 1.0 www.alchemysemi.com Page 1 of 7 Introduction The Epson graphics controller interface on the Au1000 is natively a 16 bit interface. If a 32 bit write is done to