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    TE Connectivity HSA256K8J

    RES CHAS MNT 6.8K OHM 5% 25W
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    DigiKey HSA256K8J Tray 200 1
    • 1 $6.18
    • 10 $3.733
    • 100 $2.3966
    • 1000 $1.96956
    • 10000 $1.96956
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    Avnet Americas HSA256K8J Reel 17 Weeks, 2 Days 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.78038
    • 10000 $1.65259
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    Mouser Electronics HSA256K8J 200
    • 1 $4.77
    • 10 $3.64
    • 100 $2.39
    • 1000 $1.96
    • 10000 $1.96
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    Newark HSA256K8J Bulk 200
    • 1 -
    • 10 -
    • 100 $2.64
    • 1000 $2.29
    • 10000 $2.18
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    Avnet Abacus HSA256K8J 18 Weeks 200
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    Master Electronics HSA256K8J
    • 1 -
    • 10 $3.03
    • 100 $2.46
    • 1000 $2.16
    • 10000 $1.76
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    Maxim Integrated Products DS1217A-256K-25

    MODULE NVRAM 32KB 250NS CARTRIDG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DS1217A-256K-25 5
    • 1 -
    • 10 $79.938
    • 100 $79.938
    • 1000 $79.938
    • 10000 $79.938
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    TE Connectivity HSA256K8J (ALTERNATE: 9-1625971-4)

    Aluminum Housed Solder Lug Wire Wound Resistor,6.8kOhm +/-5% 25W | TE Connectivity HSA256K8J
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS HSA256K8J (ALTERNATE: 9-1625971-4) Bulk 34 200
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    • 1000 $3.97
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    A256K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    powerpc 405

    Abstract: CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203
    Text: MPC5744P Reference Manual Document Number: MPC5744PRM Rev. 2, 06/2013 Preliminary MPC5744P Reference Manual, Rev. 2, 06/2013 2 Preliminary Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 Preface 1.1


    Original
    PDF MPC5744P MPC5744PRM powerpc 405 CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203

    Untitled

    Abstract: No abstract text available
    Text: ^ ED I _ Badronlc D aiigni Inc. EDI8F44256C Secondary Cache Memory Array Module 256Kx44 High ¡freed CMOS Secondary Cache SRAM Module to Support the R4000 CPU Feahres The EDI8F44256C is a single array multichip Static RAM module organized as a256Kx44 bits. Itcontains eleven 1l


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    PDF EDI8F44256C 256Kx44 R4000 EDI8F44256C a256Kx44 256Kx4

    Untitled

    Abstract: No abstract text available
    Text: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted


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    PDF EDI8F16256C 256Kx16 EDI8F16256C 4096K-bit 256Kx4 a256Kx16, 512Kx8 1024Kx4

    E3276

    Abstract: 24WC
    Text: C ATA LY S T Preliminary CAT24WC256 256K-Bit Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation Write Protect Feature - Entire Array Protected When WP at VIH ■ Low Power CMOS Technology 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer


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    PDF CAT24WC256 256K-Bit 64-Byte CAT24WC256 a256K-bit C256KI-1 8TE13 E3276 24WC

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8F16256C ELECTRONIC DESIGNS INC. i High Speed 4 Megabit SR AM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The ED I8F16256C is a 4096K-bit high speed C M O S Static R A M Module consisting of four 4 256Kx4 Static High Density 4096K-bit C M O S Static


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    PDF EDI8F16256C 256Kx16 I8F16256C 4096K-bit 256Kx4 a256Kx16 512Kx8 1024Kx4

    Untitled

    Abstract: No abstract text available
    Text: S1E J> m MM^bSGa □Dl&^ao HM5116400L SGriGS Low Power version 4,194,304-Word x 4-Bit Dynamic Random A cce ss Memory • DESCRIPTION 7 MM ■ H I T S Product Preview L O GI C / AR RA Y S/ M E M H IT A C H I/ T -M 4 -2 3 - '2 HM5116400U Series The Hitachi HM5116400 is a CMOS dynamic RAM organized 4,194,304 words x


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    PDF HM5116400L 304-Word HM5116400U HM5116400 ns/70 ns/80 ns/100 mW/440 TTP-20D

    EDI8F16256C

    Abstract: No abstract text available
    Text: W D EDI8F16256C \ ELECTRONIC DESIGNS INC. High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static High Density 4096K-bit CMOS Static


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    PDF EDI8F16256C 256Kx16 EDI8F16256C 4096K-bit 256Kx4 a256Kx16, 512Kx8 1024Kx4

    Untitled

    Abstract: No abstract text available
    Text: 256K 64K x 4-bit Static RAM Module DESCRIPTION FEATURES □ 2 5 6K (64K x 4-bit) Static RAM Module □ Advanced CMOS Technology □ High Speed — to 15 ns worst-case □ Low Power Operation Active: 900 mW Standby: 30 mW typical □ Single 5 V (±10%) Power Supply


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    PDF TheLMM456 a256K L7C187 LMM456 456-B LMM456SC45

    JL-040

    Abstract: IOR 450M HM-TR 30L11 42832 4283A KMF 400 LC8100 parcor 81-096
    Text: > È£= i- KNo. N 4283B /sa wo I =&mmi*=ir-zlpo:r ! zL-XN*4283Afc3 < /£M \ LC 8Î I 92 , 81096 - r A LC81192, 81096 tiP A R C O R ^ ^ ;^ <t *J1 l + y 1 ? 7 * r ^120f> LC8n92 /60^ (LC81096) O ÿfe ^ ÄI ic LSI *C & « 0 i f c , >* Ü - ^ ^ - ^ ;^ ,^ * 7 ^ - Î'R 0 M (1 9 2 K e 7 h/96Ktf 7 h ),D A ^


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    PDF 4283B LC81192 81096tipARCOR LC81l92 LC81096) 192Ke LC811921 LC8109G JL-040 IOR 450M HM-TR 30L11 42832 4283A KMF 400 LC8100 parcor 81-096

    AS4C1259

    Abstract: ba816 CSR1010
    Text: ASÍ? AUSTIN SEMICONDUCTOR, INC. 2? 9J ? ? Í : 256K X 1 DRAM 256K DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL


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    PDF AS4C1259 MIL-STD-883 150mW 256-cycle 100ns 120ns 150ns MIL-STD-883 4C1259 DS000015 ba816 CSR1010

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION MOS INTEGRATED CIRCUIT ¿ tP D 7 8 F 4 2 1 8 16/8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¡PD78F4218 is a product in the ¿¡PD784218 subseries in the 78K/IV series. The ¿¡PD78F4218 has a flash memory in the place of the internal ROM of the ¿¡PD784218. Data can be written


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    PDF 16/8-BIT PD78F4218 PD784218 78K/IV PD784218. PD784218, 784218Y

    1024KX4

    Abstract: DQ12-DQ15
    Text: ^ED I EDI8F16256C ELECTRONIC DESIGNS INC. • High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chipcarriers surface-mounted onto


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    PDF EDI8F16256C 256Kx16 EDI8F16256C 4096K-bit 256Kx4 a256Kx16 512Kx8or 1024Kx4 DQ12-DQ15

    24WC256

    Abstract: CAT24WC256
    Text: Preliminary CAT24WC256 256K-Bit Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation Write Protect Feature - Entire Array Protected When WP at VIH ■ Low Power CMOS Technology 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer


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    PDF CAT24WC256 256K-Bit 64-Byte CAT24WC256 a256K-bit 24WC256 24WC256KI-1

    Untitled

    Abstract: No abstract text available
    Text: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:


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    PDF SST31LH021_

    HN27C256AP-12

    Abstract: HN27C256AG-10 hitachi eprom DG-28 HN27C256AFP-12T HN27C256AFP-15T HN27C256AG-12 HN27C256AP-15 Hitachi Scans-001
    Text: HN27C256A Series Maintenance Only 256K 32K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27C256A is a256-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 32,768 x 8-bits. The HN27C256A features fast address access times and low


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    PDF HN27C256A a256-Kilobit 28-pin 28-lead HN27C256AP-12 HN27C256AG-10 hitachi eprom DG-28 HN27C256AFP-12T HN27C256AFP-15T HN27C256AG-12 HN27C256AP-15 Hitachi Scans-001