A3 SOT 23 Search Results

mark a3 sot23

Abstract: MARKING A3 sot23 KDS181
Contextual Info: SEMICONDUCTOR KDS181 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS181 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

ISS181

Abstract: 1SS181 MARKING A3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE

1S1585

Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Contextual Info: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage

Contextual Info: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM

Contextual Info: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM

smd sot23 marking A3

Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2

1SS193

Contextual Info: 1SS193 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm hQ 5 FEATURES: 2.5-a3 . Small Package SOT-23M0D . Low Forward Voltage V p = 0 .9 V Typ. . Fast Reverse Recovery Time trr= l ,6ns(Typ.) . Small Total Capacitance Ct =0 .9pF(Typ.)

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

Si2303DS

Abstract: A3 MARKING CODE
Contextual Info: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SÌ2303DS VISMAY Siliconix ▼ P-Channel 30-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) lD (A) (q ) 0.240 @ V GS = —10 V - 1 .7 0.460 @ V GS = —4.5 V - 1 .3 -3 0 TO -236 (SOT-23) G 1 3 D Top View S Ì2303D S (A3)* *M arking Code

TRANSISTORE

Abstract: BFS18 BFS19 Q62702 Q62702-F349
Contextual Info: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender­

Contextual Info: SÌ2303DS Siliconix P-Channel 30-V D-S Rated MOSFET New Product PR O D U C T S U M M A R Y v„s (V) r d s (ON) lD (A) (q ) 0.240 @ V GS = - 1 0 V - 1 .7 0.460 @ V GS = —4.5 V - 1 .3 -3 0 TO -236 (SOT-23) G 1 3 D Top View S i2303D S (A3)* *M arking Code

zener diode marking E7

Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74

MARKING a3 SOT-23

Contextual Info: Temic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For selfoscillating RF m ixer stages 1 R R E 3 1— 1 BF569 Marking: LH Plastic case SOT 23

Contextual Info: ADC081C021, ADC081C027 www.ti.com SNAS447B – FEBRUARY 2008 – REVISED FEBRUARY 2009 ADC081C021/ADC081C027 I2C-Compatible, 8-Bit Analog-to-Digital Converter with Alert Function Check for Samples: ADC081C021, ADC081C027 FEATURES 1 • 23 • • • • •

NCS2200-D

Abstract: MARKING ee SOT235 N Channel power MOSFET SOT-23-6 b1 marking sot-23-6 NCS2200 NCS2200A NCS2200SN1T1 NCS2200SN2T1 NCS2202 MOSFET N SOT-23-6
Contextual Info: NCS2200 Series, NCS2200A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V

Contextual Info: NCS2200, NCS2200A, NCV2200, NCS2202A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V

Contextual Info: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1

sq2t2

Abstract: NCS2200SN2T1G NCS2202SQ1T2G marking code R3 SOT353 NCS2200SQ L2 SOT-23-5
Contextual Info: NCS2200, NCS2200A, NCV2200 Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V

BU 508 transistor

Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
Contextual Info: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique

SOT 86 MARKING 03

Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S