A7A15 Search Results

Contextual Info: AT29C512 Features Fast Read Access Tim e - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram Erase and Program 512 Sectors (128 bytes/sector) Internal Address and Data Latches for 128-Bytes Internal Program Control and Timer

M395T5160QZ4-YE68

Abstract: M395T5663QZ4 M395T2863QZ4-YE68 M395T5663QZ4-YE68
Contextual Info: 1.55V FBDIMM DDR2 SDRAM DDR2 1.55V Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

M395T5160QZ4-CE66

Abstract: M395T1G60QJ4-CE68 M395T5160QZ4-CE68 M395T5160QZ4-CE65 M395T5663QZ4-CE66 M395T2863QZ4-CE65 M395T5163QZ4-CE68 M395T5663QZ4 M395T5663QZ4-CE65 M395T5160QZ4-CE6
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

M395T5160QZ4-CE65

Abstract: M395T5663QZ4-CE65 M395T5663QZ4 sda 5241 M395T5160QZ4-CE68 M395T5663QZ4-CE66 m395t2863qz4-ce68 M395T5160QZ4-CE66 M395T1G60QJ4-CE68 DDR-667
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

AT29C512-70JC

Contextual Info: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes

1-5C78

Abstract: intersil CERAMIC, LCC-32 X28C512 intersil 15t2
Contextual Info: X28C512, X28C513 Data Sheet May 23, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

AT29C512-90

Abstract: 32PIN AT29C512-12PC AT29C512 AT29C512-12 AT29C512-15 AT29C512-70 0456E
Contextual Info: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes

M395T5163FB4

Contextual Info: Rev. 1.0, Jul. 2010 M395T2863FB4 M395T5663FB4 M395T5160FB4 M395T5163FB4 240pin Fully Buffered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

TYPE 85.32

Abstract: X28C512 intersil
Contextual Info: X28C512, X28C513 Data Sheet September 29, 2005 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile

AT29C512-12PC

Abstract: AT29C512-90
Contextual Info: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes

M395T5663QZ4

Abstract: M395T2863QZ4-CD59 CI 3060 elsys M395T5160QZ4 CI 4940 M395T5163QZ
Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: AT29LV512 Features • • • • Single Supply Voltage, Range 3V to 3.6V 3-Volt-Only Read and W rite Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 |^A CMOS Standby Current Fast Read Access Tim e - 200 ns Sector Program Operation

AT29C512-90

Abstract: AT29C512 AT29C512-70 AT29C512-70JU AT29C512-70TU AT29C512-90JU
Contextual Info: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes

AT29LV102415JI

Contextual Info: AT29LV1024 Features • • • • • • • • • • • • Single Voltage, Range 3V to 3.6V Supply 3-Volt-Only Read and Write Operation Software Protected Programming Fast Read Access Time -150 ns Low Power Dissipation 15mA Active Current 50 jxA CMOS Standby Current

Contextual Info: 1.55V FBDIMM DDR2 SDRAM DDR2 1.55V Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

M395T5160QZ4-CE65

Contextual Info: FBDIMM DDR2 SDRAM DDR2 Fully Buffered DIMM 240pin FBDIMMs based on 1Gb Q-die 60FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL

AT29C512-90

Abstract: AT29C512 AT29C512-70 AT29C512-70JU AT29C512-70TU AT29C512-90JU
Contextual Info: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes

keyboard controller 8042

Abstract: weitek 80387 interfacing of RAM and ROM with 8086 386DX pipeline architecture for 80386 T704 t607 t309 logic diagram of 74LS245
Contextual Info: ELITE MICROELECTRONICS 2TE D • 3273050 0000011 b ■ ~ V Z-C? 0 - / O ELITE 80386 PC/AT EAGLE CHIPSET e88C31i & e88C312 An Overview The Eagle 386 AT chip set is designed for high performance PC-ATs with 80386DX running at 20/25/33 MHz. Major features of the Eagle chip set include:

X28C010

Abstract: X28C512 X28C512D X28C512DM X28C512J X28C513 X28C513EM X28C512 intersil
Contextual Info: X28C512, X28C513 Data Sheet June 7, 2006 5V, Byte Alterable EEPROM Features The X28C512, X28C513 are 64K x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28C512, X28C513 are 5V only devices. The

Contextual Info: Features * * * * * * * * * * * * Single Supply Voltage, Range 3V to 3.6V 3-Volt Only Read and Write Operation Software Protected Programming Low Power Dissipation - 15 mA Active Current - 40 pA CMOS Standby Current Fast Read Access Time - 200 ns Sector Program Operation

AT29C512-12PC

Abstract: AT29C512 AT29C512-12 AT29C512-15 AT29C512-70 AT29C512-90
Contextual Info: Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Sector Program Operation • • • • • • • • • – Single Cycle Reprogram Erase and Program – 512 Sectors (128 Bytes/Sector) – Internal Address and Data Latches for 128 Bytes

Contextual Info: 123456789ABCD8ECF9A2CCC C 1 12324567829AB7CDE7AF4AAB77 CD5AEF1A96BF13FA16EF1A11 34E671151 1111151 1!"1#1$753FA%839AB1 111&'51  1!"1 #1$753FA%839AB1

Contextual Info: «O V i C 1992 MEC il PD431018 65,536 x 18-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Information October 1992 Description Pin Configurations The /1/PD431018 is a 65,536-word by 18-bit static RAM fabricated with advanced silicon-gate technology,