A948 Search Results

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: KEMET Part Number: PFR5331J63J11L4BULK F411JH331J063C Capacitor, film, 330 pF, +/-5% Tol, -55/+100C, General Purpose, 63VDC@85C, Lead Spacing=5 mm General Information Supplier: Miscellaneous Electrical: KEMET An operating temperature up to +105C is allowed under certain

VOL-6FL4-500

Abstract: VOL-PPCB-F24K VOL-0256W VOL-PPCB-F48K VOL-6FP4-1000 VOL-0712B VOL-0255W Quante pouyet VOL-PPCA-F24K VOL-6UP4-305
Contextual Info: 3M Telecommunications Solutions for Networks Product Solution Guide for Enterprise Networks Innovation Solutions for Enterprise Networks Everything your Network needs 3M Enterprise Network Solutions offer an array of high performance solutions for copper, fibre and copper/fibre hybrid networks.

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: 234567489AB6CDEF87D6 E7F32 11 123456789ABCDEAF 3A488FD3BDED ABDED   !AFA3D4B8F723DE82F " %

FM28V100-TG

Abstract: RAMTRON
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx8 High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

FM28V020-SG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SGTR
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

d6849

Contextual Info: 123456789ABCDEF9 CCCCCCCCCCCCCCCCCCCCCCCCCCCC CAT5 Audio ExtenderC 1 1 1234356789A56BC23D9346 1 234567184595A1BC7DA1B671B1EDF9AA651 C14A1155411E545981A591B18D651 1FB 51 !CA9481EC4DE57DB185B"5981 5B7A6581A915B9A65811 #CD4$D61EDF9AA65195BEDD591

Contextual Info: FM28V100 1-Mbit Bytewide F-RAM Memory Features SRAM Replacement • JEDEC 128Kx8 SRAM pinout • 60 ns Access Time, 90 ns Cycle Time Low Power Operation • 2.0V – 3.6V Power Supply • Standby Current 90 µA typ • Active Current 7 mA (typ) Superior to Battery-backed SRAM Modules

FM28V020-TG

Abstract: AEC-Q100-002 FM18L08 FM28V020 FM28V020-SG FM28V020-SGTR FM28V020TG AEC-Q100-003
Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: 234567489AB6CDEF87D6 E7F32  11 123456789ABCDEAF 3A488FD3BDED ABDED BBB3BDEBB1B3B723ABD83B7DFB8F46A AFA3D4B8F723DE82F ! $

FM28V020-T

Contextual Info: FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 1014 Read/Write Cycles NoDelay Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

MCIMX51RM

Abstract: Reference Manual Samsung eMMC 4.41 hynix emmc toshiba emmc 4.4 spec mp3 player schematic diagram BR A928 Hynix eMMC 4.5 controller AMD z430 nec a1129
Contextual Info: An errata for this document is available. See Document ID#: IMX51RMAD. MCIMX51 Multimedia Applications Processor Reference Manual MCIMX51RM Rev. 1 2/2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed:

A9370

Abstract: A9500 A9220 A949 A9440 a9230 A934 A9320 a9430 A9330
Contextual Info: 1,550nm DWDM Direct Modulation DFB Laser FLD5F15CX-A FEATURES • Direct Modulated DFB Laser for WDM systems • Optimized for Long Distance Transmission Dispersion 3200ps/nm • Peak wavelength 1527.99 to 1563.05nm (C Band: 191.8 to 196.2THz, 100GHz spacing)

Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

D0413

Abstract: A1443 a1047 A849 A1245 A1344 GAL22V10 National semiconductor microcontroller a948 NM24C02
Contextual Info: voltage operation self timed write cycle can have data corruption problems due to noise spikes glitches bus contention etc which may initiate a false write or erase cycle This data corruption is a concern for the designer since the nonvolatile nature of the EEPROM means that after data corruption has occurred it cannot be cleared simply by removing the power for example as with a volatile memory such

FM28V100-TG

Abstract: AEC-Q100-002 FM18L08 FM20L08 FM28V100 tca 335 A
Contextual Info: Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion 1014 Read/Writes • NoDelay Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process

a4534

Contextual Info: 234567489AB6CDEF87D6 E7F32 11 123456789ABCDEAF 3A488FD3BDED ABDED   AFA3D4B8F723DE82F ! $

Contextual Info: 234567489AB6CDEF87D6 E7F32  1 123456789ABCDEAF 3A488FD3BDED ABDED BBBDEB1BBDEA3B 224A !AFA3D4B8F723DE82F "ED #$B723B%D3826$B8F%A3EA3BD48 DE82F&B"A8 2F6 E23$B'ADEB$8F#$B38%A3$BDFB$AF$23$B8F 46A& 'A$ABD3AB2F4BEA 'F8 D4BDED